Differential touch screen display signal processing

ABSTRACT

A method includes providing, by a processing module of a differential touch screen display, a plurality of row and column analog reference signals to a plurality of column and row differential drive-sense circuits of the differential touch screen display. The plurality of column and row differential drive-sense circuits is coupled to a plurality of column differential electrode pairs and a plurality of row differential electrode pairs. The plurality of column analog reference signals includes a first oscillating component at a first frequency and the plurality of row analog reference signals includes the first oscillating component and a second oscillating component at a second frequency. The method further includes obtaining a set of column and row sensed signals from a set of column and row differential drive-sense circuits and interpreting the set of column and row sensed signals as one or more of a self-capacitance and a cross mutual capacitance.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present U.S. Utility Patent Application claims priority pursuant to35 U.S.C. § 120 as a continuation of U.S. Utility application Ser. No.17/449,228, entitled “DIFFERENTIAL TOUCH SCREEN DISPLAY” filed Sep. 28,2021, which is hereby incorporated herein by reference in its entiretyand made part of the present U.S. Utility Patent Application for allpurposes.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

Not Applicable.

INCORPORATION-BY-REFERENCE OF MATERIAL SUBMITTED ON A COMPACT DISC

Not Applicable.

BACKGROUND OF THE INVENTION Technical Field of the Invention

This disclosure relates generally to data communication systems and moreparticularly to sensed data collection and/or communication.

Description of Related Art

Sensors are used in a wide variety of applications ranging from in-homeautomation, to industrial systems, to health care, to transportation,and so on. For example, sensors are placed in bodies, automobiles,airplanes, boats, ships, trucks, motorcycles, cell phones, televisions,touch-screens, industrial plants, appliances, motors, checkout counters,etc. for the variety of applications.

In general, a sensor converts a physical quantity into an electrical oroptical signal. For example, a sensor converts a physical phenomenon,such as a biological condition, a chemical condition, an electriccondition, an electromagnetic condition, a temperature, a magneticcondition, mechanical motion (position, velocity, acceleration, force,pressure), an optical condition, and/or a radioactivity condition, intoan electrical signal.

A sensor includes a transducer, which functions to convert one form ofenergy (e.g., force) into another form of energy (e.g., electricalsignal). There are a variety of transducers to support the variousapplications of sensors. For example, a transducer is capacitor, apiezoelectric transducer, a piezoresistive transducer, a thermaltransducer, a thermal-couple, a photoconductive transducer such as aphotoresistor, a photodiode, and/or phototransistor.

A sensor circuit is coupled to a sensor to provide the sensor with powerand to receive the signal representing the physical phenomenon from thesensor. The sensor circuit includes at least three electricalconnections to the sensor: one for a power supply; another for a commonvoltage reference (e.g., ground); and a third for receiving the signalrepresenting the physical phenomenon. The signal representing thephysical phenomenon will vary from the power supply voltage to ground asthe physical phenomenon changes from one extreme to another (for therange of sensing the physical phenomenon).

The sensor circuits provide the received sensor signals to one or morecomputing devices for processing. A computing device is known tocommunicate data, process data, and/or store data. The computing devicemay be a cellular phone, a laptop, a tablet, a personal computer (PC), awork station, a video game device, a server, and/or a data center thatsupport millions of web searches, stock trades, or on-line purchasesevery hour.

The computing device processes the sensor signals for a variety ofapplications. For example, the computing device processes sensor signalsto determine temperatures of a variety of items in a refrigerated truckduring transit. As another example, the computing device processes thesensor signals to determine a touch on a touch screen. As yet anotherexample, the computing device processes the sensor signals to determinevarious data points in a production line of a product.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING(S)

FIG. 1 is a schematic block diagram of an embodiment of a differentialtouch screen computing device;

FIG. 2 is a schematic block diagram of an embodiment of a differentialtouch screen display;

FIG. 3 is a schematic block diagram of an embodiment of a drive-sensecircuit (DSC);

FIG. 4 is an example graph that plots condition verses capacitance foran electrode of a touch screen display having drive-sense circuits (DSC)coupled to electrodes;

FIG. 5 is an example graph that plots impedance verses frequency for anelectrode of a touch screen display having drive-sense circuits (DSCs)coupled to electrodes;

FIG. 6 is a time domain example graph that plots magnitude verses timefor an analog reference signal;

FIG. 7 is a frequency domain example graph that plots magnitude versesfrequency for an analog reference signal;

FIG. 8 is a schematic block diagram of an example of a first drive-sensecircuit coupled to a first electrode and a second drive-sense circuitcoupled to a second electrode;

FIG. 9 is a schematic block diagram of an embodiment of a differentialdrive-sense circuit (DDSC);

FIG. 10 is a schematic block diagram of another embodiment of adifferential drive-sense circuit (DDSC);

FIGS. 11A-11B are schematic block diagrams of examples of mutualcapacitance electric fields of differential electrode pairs;

FIG. 12 is a schematic block diagram of an embodiment of a portion of adifferential touch screen display;

FIGS. 13A-13B are schematic block diagrams of embodiments of a pluralityof electrodes creating a plurality of touch sense cells within a touchscreen display;

FIGS. 14A-14D are schematic block diagrams of embodiments of touchscreen electrode patterns;

FIG. 15 is a schematic block diagram of an example of a firstdifferential drive-sense circuit (DDSC) coupled to a column differentialpair of electrodes and a third differential drive-sense circuit (DDSC)coupled to a row differential pair of electrodes;

FIG. 15A is a schematic block diagram of another example of a firstdifferential drive-sense circuit (DDSC) coupled to a column differentialpair of electrodes and a third differential drive-sense circuit (DDSC)coupled to a row differential pair of electrodes;

FIG. 15B is a schematic block diagram of another example of a firstdifferential drive-sense circuit (DDSC) coupled to a column differentialpair of electrodes and a third differential drive-sense circuit (DDSC)coupled to a row differential pair of electrodes;

FIG. 16 is a schematic block diagram of a touchless example of a fewdifferential drive-sense circuits and a portion of the touch screenprocessing module of a differential touch screen display;

FIG. 17 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display;

FIG. 18 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display;

FIG. 19 is a schematic block diagram of an example of columndifferential drive-sense circuits and a portion of the touch screenprocessing module of a no-ground plane differential touch screendisplay;

FIG. 20 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display;

FIGS. 21A-21B are schematic block diagrams of embodiments ofdifferential drive-sense circuits and a portion of the touch screenprocessing module of a no-ground plane differential touch screendisplay;

FIG. 22 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display;

FIG. 23 is a schematic block diagram of an embodiment of a differentialdrive-sense circuit (DDSC);

FIG. 24 is a schematic block diagram of an embodiment of a portion of adifferential touch screen display;

FIG. 25 is a schematic block diagram of another embodiment of a portionof a differential touch screen display; and

FIG. 26 is a schematic block diagram of an embodiment of differentialdrive-sense circuits and a portion of the touch screen processing moduleof a differential touch screen display.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 is a schematic block diagram of an embodiment of a differentialtouch screen computing device 10. The differential touch screencomputing device 10 includes a differential touch screen 12, a corecontrol module 14, one or more processing modules 16, one or more mainmemories 18, cache memory 20, a video graphics processing module 22, adisplay 24, an Input-Output (I/O) peripheral control module 26, one ormore input/output (I/O) interface modules 28, one or more networkinterface modules 30, and one or more memory interface modules 32. Aprocessing module 16 is described in greater detail at the end of thedetailed description of the invention section and, in an alternativeembodiment, has a direction connection to the main memory 18. In analternate embodiment, the core control module 14 and the I/O and/orperipheral control module 26 are one module, such as a chipset, a quickpath interconnect (QPI), and/or an ultra-path interconnect (UPI).

The differential touch screen 12 includes a differential touch screendisplay, a plurality of differential sensor pairs, a plurality ofdifferential drive-sense circuits (DDSCs), and a touch screen processingmodule 34. In general, the differential sensor pairs (e.g., differentialelectrode pairs, differential capacitor sensing cell pairs, differentialcapacitor sensors pairs, differential inductive sensor pairs, etc.)detect a proximal touch of the screen. For example, when one or morefingers touches the screen, capacitance of differential sensor pairsproximal to the touch(es) are affected (e.g., impedance changes). Thedifferential drive-sense circuits (DDSCs) coupled to affecteddifferential sensor pairs detect the change and provide a representationof the change to the touch screen processing module 34, which may be aseparate processing module or integrated into the processing module 16.

In comparison to drive-sense circuits (DSCs) coupled to single sensors,the DDSCs are more sensitive to small changes and reduce noise and powerof the differential touch screen computing device. A DDSC will bediscussed in more detail with reference to FIG. 9 .

The touch screen processing module 34 processes the representativesignals from the differential drive-sense circuits (DDSCs) to determinethe location of the touch(es). This information is inputted to theprocessing module 16 for processing as an input. For example, a touchrepresents a selection of a button on screen, a scroll function, a zoomin-out function, etc.

Each of the main memories 18 includes one or more Random Access Memory(RAM) integrated circuits, or chips. For example, a main memory 18includes four DDR4 (4^(th) generation of double data rate) RAM chips,each running at a rate of 2,400 MHz. In general, the main memory 18stores data and operational instructions most relevant for theprocessing module 16. For example, the core control module 14coordinates the transfer of data and/or operational instructions fromthe main memory 18 and the memory 36-38. The data and/or operationalinstructions retrieve from memory 36-38 are the data and/or operationalinstructions requested by the processing module or will most likely beneeded by the processing module. When the processing module is done withthe data and/or operational instructions in main memory, the corecontrol module 14 coordinates sending updated data to the memory 36-38for storage.

The memory 36-38 includes one or more hard drives, one or more solidstate memory chips, and/or one or more other large capacity storagedevices that, in comparison to cache memory and main memory devices,is/are relatively inexpensive with respect to cost per amount of datastored. The memory 36-38 is coupled to the core control module 14 viathe I/O and/or peripheral control module 26 and via one or more memoryinterface modules 32. In an embodiment, the I/O and/or peripheralcontrol module 26 includes one or more Peripheral Component Interface(PCI) buses to which peripheral components connect to the core controlmodule 14. A memory interface module 32 includes a software driver and ahardware connector for coupling a memory device to the I/O and/orperipheral control module 26. For example, a memory interface 32 is inaccordance with a Serial Advanced Technology Attachment (SATA) port.

The core control module 14 coordinates data communications between theprocessing module(s) 16 and network(s) via the I/O and/or peripheralcontrol module 26, the network interface module(s) 30, and a networkcard 40 or 42. The network(s) includes one more local area networks(LAN) and/or one or more wide area networks WAN), which may be a publicnetwork and/or a private network. A LAN may be a wireless-LAN (e.g.,Wi-Fi access point, Bluetooth, ZigBee, etc.) and/or a wired network(e.g., Firewire, Ethernet, etc.). A WAN may be a wired and/or wirelessWAN. For example, a LAN may be a personal home or business's wirelessnetwork and a WAN is the Internet, cellular telephone infrastructure,and/or satellite communication infrastructure.

A network card 40 or 42 includes a wireless communication unit or awired communication unit. A wireless communication unit includes awireless local area network (WLAN) communication device, a cellularcommunication device, a Bluetooth device, and/or a ZigBee communicationdevice. A wired communication unit includes a Gigabit LAN connection, aFirewire connection, and/or a proprietary computer wired connection. Anetwork interface module 30 includes a software driver and a hardwareconnector for coupling the network card to the I/O and/or peripheralcontrol module 26. For example, the network interface module 60 is inaccordance with one or more versions of IEEE 802.11, cellular telephoneprotocols, 10/100/1000 Gigabit LAN protocols, etc.

The core control module 14 coordinates data communications between theprocessing module(s) 16 and input device(s) via the I/O interfacemodule(s) 28 and the I/O and/or peripheral control module 26. An inputdevice includes a keypad, a keyboard, control switches, a touchpad, amicrophone, a camera, etc. An I/O interface module 28 includes asoftware driver and a hardware connector for coupling an input device tothe I/O and/or peripheral control module 26. In an embodiment, an I/Ointerface module 28 is in accordance with one or more Universal SerialBus (USB) protocols.

The core control module 14 coordinates data communications between theprocessing module(s) 16 and output device(s) via the I/O interfacemodule(s) 28 and the I/O and/or peripheral control module 26. An outputdevice includes a speaker, etc. An I/O interface module 26 includes asoftware driver and a hardware connector for coupling an output deviceto the I/O and/or peripheral control module 26. In an embodiment, an I/Ointerface module 28 is in accordance with one or more audio codecprotocols.

The processing module 16 communicates directly with a video graphicsprocessing module 22 to display data on the display 24. The display 24includes an LED (light emitting diode) display, an LCD (liquid crystaldisplay), and/or other type of display technology. The display 24 has aresolution, an aspect ratio, and other features that affect the qualityof the display 24. The video graphics processing module 22 receives datafrom the processing module 16, processes the data to produce rendereddata in accordance with the characteristics of the display 24, andprovides the rendered data to the display 24.

FIG. 2 is a schematic block diagram of an embodiment of a differentialtouch screen display 44 that includes a plurality of differentialdrive-sense circuits (DDSCs), a touch screen processing module 56, adisplay 52, a plurality of row differential electrode pairs 54-r, and aplurality of column differential electrode pairs 54-c. The differentialtouch screen display 44 is coupled to a processing module 16, a videographics processing module 22, and a display interface 50, which arecomponents of a computing device (e.g., differential touch screencomputing device 10), an interactive display, or other device thatincludes a differential touch screen display. An interactive displayfunctions to provide users with an interactive experience (e.g., touchthe screen to obtain information, be entertained, etc.). For example, astore provides interactive displays for customers to find certainproducts, to obtain coupons, to enter contests, etc.

There are a variety of other devices that include a touch screendisplay. For example, a vending machine includes a touch screen displayto select and/or pay for an item. As another example of a device havinga touch screen display is an Automated Teller Machine (ATM). As yetanother example, an automobile includes a touch screen display forentertainment media control, navigation, climate control, etc.

The differential touch screen display 44 may include a large display 52that has a resolution equal to or greater than full high-definition(HD), an aspect ratio of a set of aspect ratios, and a screen size equalto or greater than thirty-two inches. The following table lists variouscombinations of resolution, aspect ratio, and screen size for thedisplay 52, but it is not an exhaustive list.

Width Height pixel aspect screen Resolution (lines) (lines) ratio aspectratio screen size (inches) HD (high 1280 720 1:1 16:9 32, 40, 43, 50,55, 60, 65, definition) 70, 75, &/or >80 Full HD 1920 1080 1:1 16:9 32,40, 43, 50, 55, 60, 65, 70, 75, &/or >80 HD 960 720 4:3 16:9 32, 40, 43,50, 55, 60, 65, 70, 75, &/or >80 HD 1440 1080 4:3 16:9 32, 40, 43, 50,55, 60, 65, 70, 75, &/or >80 HD 1280 1080 3:2 16:9 32, 40, 43, 50, 55,60, 65, 70, 75, &/or >80 QHD 2560 1440 1:1 16:9 32, 40, 43, 50, 55, 60,65, (quad HD) 70, 75, &/or >80 UHD (Ultra 3840 2160 1:1 16:9 32, 40, 43,50, 55, 60, 65, HD) or 4K 70, 75, &/or >80 8K 7680 4320 1:1 16:9 32, 40,43, 50, 55, 60, 65, 70, 75, &/or >80 HD and 1280->=7680 720->=4320 1:1,2:3,  2:3 50, 55, 60, 65, 70, 75, above etc. &/or >80

The display 52 is one of a variety of types of displays that is operableto render frames of data into visible images. For example, the displayis one or more of: a light emitting diode (LED) display, anelectroluminescent display (ELD), a plasma display panel (PDP), a liquidcrystal display (LCD), an LCD high performance addressing (HPA) display,an LCD thin film transistor (TFT) display, an organic light emittingdiode (OLED) display, a digital light processing (DLP) display, asurface conductive electron emitter (SED) display, a field emissiondisplay (FED), a laser TV display, a carbon nanotubes display, a quantumdot display, an interferometric modulator display (IMOD), and a digitalmicroshutter display (DMS). The display is active in a full display modeor a multiplexed display mode (i.e., only part of the display is activeat a time).

The display 52 further includes integrated differential electrode pairs54 that provide the sensors for the touch sense part of the touch screendisplay. The differential electrode pairs 54 are distributed throughoutthe display area or where touch screen functionality is desired. Forexample, a first group of the differential electrode pairs are arrangedin rows and a second group of differential electrode pairs are arrangedin columns. As will be discussed in greater detail with reference to oneor more of the following Figures, the row differential electrode pairsare separated from the column differential electrode pairs by adielectric material. As compared to an electrode coupled to adrive-sense circuit (DSC), a differential electrode pair coupled to adifferential drive-sense circuit (DDSC), is more sensitive to proximaltouches and/or hovers due to increased mutual capacitance and decreasedcommon mode noise. The electrode coupled to a drive-sense circuit (DSC)will be discussed in greater detail with reference to FIG. 3 . Thedifferential electrode pair coupled to a differential drive-sensecircuit (DDSC) will be discussed in greater detail with reference toFIG. 9 .

The electrodes 54 are comprised of a transparent conductive material andare in-cell or on-cell with respect to layers of the display. Forexample, a conductive trace is placed in-cell or on-cell of a layer ofthe touch screen display. The transparent conductive material, which issubstantially transparent and has negligible effect on video quality ofthe display with respect to the human eye. For instance, an electrode isconstructed from one or more of: Indium Tin Oxide, Graphene, CarbonNanotubes, Thin Metal Films, Silver Nanowires Hybrid Materials,Aluminum-doped Zinc Oxide (AZO), Amorphous Indium-Zinc Oxide,Gallium-doped Zinc Oxide (GZO), and poly polystyrene sulfonate (PEDOT).

In an example of operation, the processing module 16 is executing anoperating system application 58 and one or more user applications 48.The user applications 48 include, but are not limited to, a videoplayback application, a spreadsheet application, a word processingapplication, a computer aided drawing application, a photo displayapplication, an image processing application, a database application,etc. While executing an application 48, the processing module generatesdata for display (e.g., video data, image data, text data, etc.). Theprocessing module 16 sends the data to the video graphics processingmodule 22, which converts the data into frames of video 46 (i.e., data).

The video graphics processing module 22 sends the frames of video 46(e.g., frames of a video file, refresh rate for a word processingdocument, a series of images, etc.) to the display interface 50. Thedisplay interface 50 provides the frames of video to the display 52,which renders the frames of video into visible images.

While the display 52 is rendering the frames of video into visibleimages, the differential drive-sense circuits (DDSCs) providedifferential electrode signals to the differential electrode pairs 54.When the screen is touched, capacitance of the electrodes 54 proximal tothe touch (i.e., directly or close by (e.g., a hover)) is changed. TheDDSCs detect the capacitance change for affected electrodes and providethe detected change to the touch screen processing module 56.

The touch screen processing module 56 processes the capacitance changeof the affected electrodes to determine one or more specific locationsof touch and provides this information to the processing module 16. Theprocessing module 16 processes the one or more specific locations oftouch to determine if an operation of the application is to be altered.For example, the touch is indicative of a pause command, a fast forwardcommand, a reverse command, an increase volume command, a decreasevolume command, a stop command, a select command, a delete command, etc.In another embodiment, the processing module 16 also operates as thetouch screen processing module 56.

FIG. 3 is a schematic block diagram an embodiment of a drive-sensecircuit (DSC) 60 coupled to an electrode 54 that includes a firstconversion circuit 62 and a second conversion circuit 64. The firstconversion circuit 62 includes comparator (comp) 66 and an analog todigital converter (ADC) 68. The second conversion circuit 64 includes adigital to analog converter (DAC) 70, a signal source circuit 72, and adriver 74.

The analog to digital converter (ADC) 68 may be implemented in a varietyof ways. For example, the ADC 68 is one of: a flash ADC, a successiveapproximation ADC, a ramp-compare ADC, a Wilkinson ADC, an integratingADC, a delta encoded ADC, and/or a sigma-delta ADC. The digital toanalog converter (DAC) 70 may be a sigma-delta DAC, a pulse widthmodulator DAC, a binary weighted DAC, a successive approximation DAC,and/or a thermometer-coded DAC.

The feedback loop of the drive-sense circuit 60 functions to keep anelectrode signal 76 substantially matching an analog reference signal78. As such, the electrode signal 76 will have a similar waveform tothat of the analog reference signal 78. The first conversion circuit 62converts the electrode signal 76 into a sensed signal 84. The secondconversion circuit 64 generates the drive signal component 80 from thesensed signal 84. As an example, the first and second conversioncircuits 62 and 64 function to keep the electrode signal 76substantially constant (e.g., substantially matching the referencesignal 78) with the first conversion circuit creating the sensed signal84 to correspond the receive signal component 82 of the electrode signal76 and the second conversion circuit 64 generating the drive signalcomponent 80 based on adjusting the source signal in accordance with thesensed signal 84.

In an example, the electrode signal 76 is provided to an electrode 54 asa regulated current signal. The regulated current (I) signal incombination with the impedance (Z) of the electrode 54 creates a voltage(V), where V=I*Z. As the impedance (Z) of the electrode 54 changes, theregulated current (I) signal is adjusted to keep the voltage (V)substantially unchanged. To regulate the current signal, the DSC adjuststhe drive signal component 80 based on the receive signal component 82of the sensed signal 84, which is indicative of the impedance of theelectrode 54 and changes thereof.

More specifically, the comparator 66 compares the electrode signal 76 tothe analog reference signal 78 to produce an analog comparison signal86. The analog comparison signal 86 contains a representation of thedrive signal component 80 and the receive signal component 82. Theanalog reference signal 78 (e.g., a current signal or a voltage signal)includes a DC component and an oscillating component. The DC componentis a DC voltage in the range of a few tens of milli-volts to tens ofvolts or more. The oscillating component includes a sinusoidal signal, asquare wave signal, a triangular wave signal, a multiple level signal(e.g., has varying magnitude over time with respect to the DCcomponent), and/or a polygonal signal (e.g., has a symmetrical orasymmetrical polygonal shape with respect to the DC component). Inanother example, the frequency of the oscillating component may vary sothat it can be tuned to the impedance of the electrode and/or to beoff-set in frequency from other electrode signals.

The analog to digital converter 70 converts the analog comparison signal86 into a digital sensed signal 84 representative of the receivedsignal. In another embodiment, the analog to digital converter 68 andthe digital to analog converter 70 are not included and the analogcomparison signal 86 is output to the processing module for analysis andanalog filtering.

The second conversion circuit 64 adjusts the regulated current based onthe changes to the sensed signal 84. More specifically, the digital toanalog converter (DAC) 70 converts the sensed signal 84 into an analogfeedback signal 88. The signal source circuit 72 (e.g., a dependentcurrent source, a linear regulator, a DC-DC power supply, etc.)generates a regulated source signal 90 (e.g., a regulated current signalor a regulated voltage signal) based on the analog feedback signal 88.The driver 74 increases power of the regulated source signal 90 toproduce the drive signal component 80. Note that, in an embodiment, thedriver may be omitted.

As another example, the electrode signal 76 is provided to the electrode54 as a regulated voltage signal. The regulated voltage (V) signal incombination with the impedance (Z) of the electrode 54 creates anelectrode current (I), where I=V/Z. As the impedance (Z) of electrodechanges, the regulated voltage (V) signal is adjusted to keep theelectrode current (I) substantially unchanged. To regulate the voltagesignal, the first conversion circuit 62 adjusts the sensed signal 84based on the receive signal component 82, which is indicative of theimpedance of the electrode 54 and changes thereof. The second conversioncircuit 64 adjusts the regulated voltage based on the changes to thesensed signal 84.

The digital filtering of the DSC outputted signals can have a verynarrow bandwidth (e.g., 100 Hz or less). The combination of low samplingrate, greater than 100 dBm SNR of the DSCs, and very narrow bandwidthallows for very accurate measurements of very low voltage (and/orcurrent) changes of the cells (e.g., of a few nano-volts to tens ofpico-volts) in this embodiment and in others.

FIG. 4 is an example graph that plots condition verses capacitance foran electrode of a touch screen display having drive-sense circuits(DSCs) coupled to electrodes as discussed with reference to FIG. 3 . Asshown, the mutual capacitance decreases with a touch and the selfcapacitance increases with a touch. Note that the mutual capacitance andself capacitance for a no-touch condition are shown to be about thesame. This is done merely for ease of illustration. In practice, themutual capacitance and self capacitance may or may not be about the samecapacitance based on the various properties of the touch screen displaydiscussed above.

FIG. 5 is an example graph that plots impedance verses frequency for anelectrode of a touch screen display having drive-sense circuits (DSCs)coupled to electrodes as discussed with reference to FIG. 3 . Since theimpedance of an electrode is primarily based on its capacitance (selfand/or mutual), as the frequency increases for a fixed capacitance, theimpedance decreases based on 1/2πfC, where f is the frequency and C isthe capacitance.

FIG. 6 is a time domain example graph that plots magnitude verses timefor an analog reference signal 78. As discussed with reference to FIG. 3, the analog reference signal 78 (e.g., a current signal or a voltagesignal) is inputted to a comparator and is compared to the electrodesignal 76. The feedback loop of the drive-sense circuit 60 functions tokeep the electrode signal 76 substantially matching the analog referencesignal 78. As such, the electrode signal 76 will have a similar waveformto that of the analog reference signal 78.

In an example, the analog reference signal 78 includes a DC component 92and/or one or more oscillating components 94. The DC component 92 is aDC voltage in the range of a few hundred milli-volts to tens of volts ormore. The oscillating component 94 includes a sinusoidal signal, asquare wave signal, a triangular wave signal, a multiple level signal(e.g., has varying magnitude over time with respect to the DCcomponent), and/or a polygonal signal (e.g., has a symmetrical orasymmetrical polygonal shape with respect to the DC component).

In another example, the frequency of the oscillating component 94 mayvary so that it can be tuned to the impedance of the sensor and/or to beoff-set in frequency from other sensor signals in a system. For example,a capacitance sensor's impedance decreases with frequency. As such, ifthe frequency of the oscillating component is too high with respect tothe capacitance, the capacitor looks like a short and variances incapacitances will be missed. Similarly, if the frequency of theoscillating component is too low with respect to the capacitance, thecapacitor looks like an open and variances in capacitances will bemissed.

FIG. 7 is a frequency domain example graph that plots magnitude versesfrequency for an analog reference signal 78. As shown, the analogreference signal 78 includes the DC component 92 at DC (e.g., 0 Hz ornear 0 Hz), a first oscillating component 94-1 at a first frequency(f₁), and a second oscillating component 94-2 at a second frequency(f₂). In an example, the DC component is used to measure resistance ofan electrode (if desired), the first oscillating component 94-1 is usedto measure the impedance of self capacitance, and the second oscillatingcomponent 94-2 is used to measure the impedance of mutual capacitance.Note that the second frequency may be greater than the first frequency.

FIG. 8 is a schematic block diagram of an example of a first drive-sensecircuit 60-1 coupled to a first electrode 54-c and a second drive-sensecircuit 60-2 coupled to a second electrode 54-r without a touch proximalto the electrodes. Each of the drive-sense circuits include acomparator, an analog to digital converter (ADC) 68, a digital to analogconverter (DAC) 70, a signal source circuit 72, and a driver. Thefunctionality of this embodiment of a drive-sense circuit was describedwith reference to FIG. 3 . For additional embodiments of a drive-sensecircuit see patent application entitled, “Drive-sense circuit withDrive-Sense Line” having issue date of Aug. 24, 2021, and a U.S. PatentNo. 11,099,032.

As an example, a first reference signal 78-1 (e.g., analog or digital)is provided to the first drive-sense circuit 60-1 and a second referencesignal 78-2 (e.g., analog or digital) is provided to the seconddrive-sense circuit 60-2. The first reference signal includes a DCcomponent and/or an oscillating at frequency f₁. The second referencesignal includes a DC component and/or two oscillating components: thefirst at frequency f₁ and the second at frequency f₂.

The first drive-sense circuit 60-1 generates an electrode signal 76based on the reference signal 78-1 and provides the electrode signal tothe column electrode 54-c. The second drive-sense circuit generatesanother electrode signal 76 based on the reference signal 78-2 andprovides the electrode signal to the row electrode 54-r.

In response to the electrode signals being applied to the electrodes,the first drive-sense circuit 60-1 generates a first sensed signal 84-1,which includes a component at frequency f₁ and a component a frequencyf₂. The component at frequency f₁ corresponds to the self capacitance ofthe column electrode 54-c and the component a frequency f₂ correspondsto the mutual capacitance between the row and column electrodes 54-c and54-r. The self capacitance is expressed as 1/(2πf₁C_(p1)) and the mutualcapacitance is expressed as 1/(2πf₂C_(m_0)).

Also, in response to the electrode signals being applied to theelectrodes, the second drive-sense circuit 60-2 generates a secondsensed signal 84-2, which includes a component at frequency f₁ and acomponent a frequency f₂. The component at frequency f₁ corresponds to ashielded self capacitance of the row electrode 54-r and the component afrequency f₂ corresponds to an unshielded self capacitance of the rowelectrode 54-r. The shielded self capacitance of the row electrode isexpressed as 1/(2πf₁C_(p2)) and the unshielded self capacitance of therow electrode is expressed as 1/(2πf₁C_(p2)).

With each active drive-sense circuit using the same frequency for selfcapacitance (e.g., f₁), the row and column electrodes are at the samepotential, which substantially eliminates cross-coupling between theelectrodes. This provides a shielded (i.e., low noise) self capacitancemeasurement for the active drive-sense circuits. In this example, withthe second drive-sense circuit transmitting the second frequencycomponent, it has a second frequency component in its sensed signal butis primarily based on the row electrode's self capacitance with somecross coupling from other electrodes carrying signals at differentfrequencies. The cross coupling of signals at other frequencies injectsunwanted noise into this self capacitance measurement and hence it isreferred to as unshielded.

FIG. 9 is a schematic block diagram of an embodiment of a differentialdrive-sense circuit (DDSC) 96 that includes drive-sense circuits 60-1and 60-2, a 180° phase shifter 98, and an output operational amplifier(op-amp) 100. The drive-sense circuits 60-1 and 60-2 each include anop-amp 102-1 and 102-2, and a regulated current source circuit 104-1 and104-2. Within the drive-sense circuit 60-1, the positive input terminalof the op-amp 102-1 is coupled to a first electrode 54-1 of adifferential electrode pair and the negative input terminal of theop-amp 102-1 is coupled to a voltage reference source (e.g., via asignal generator, via the processing module that generates and providesthe voltage reference signal, etc.) that provides an analog referencesignal (e.g., voltage reference signal VREF). Within the drive-sensecircuit 60-2, the positive input terminal of the op-amp 102-2 is coupledto the 180° phase shifter 98 which provides a 180° phase shifted versionof the analog reference signal (voltage reference signal VREF′) and thenegative input terminal of the op-amp 56-2 is coupled to a secondelectrode 54-2 of the differential electrode pair.

The drive-sense circuits 60-1 and 60-2 operate similarly to thedrive-sense circuit 60 of FIG. 3 where the feedback loops function tokeep the electrode signals 76-1 and 76-2 substantially matching theanalog reference signals (e.g., VREF and VREF′). As such, the electrodesignal 76-1 will have a similar waveform to that of the VREF and theelectrode signal 76-2 will have a similar waveform to that of the VREF′.

The electrode signals 76-1 and 76-2 form a differential electrode signalthat each include a drive signal component and a receive signalcomponent. The op-amp 102-1 of the drive-sense circuit 60-1 compares theelectrode signal 76-1 to the VREF signal to produce an analog comparisonsignal 106-1. The analog comparison signal 106-1 contains arepresentation of the receive signal (e.g., the reference signal VREFand the receive signal). The analog comparison signal 106-1 is fed backto the regulated current source circuit 104-1 as analog feedback signal108-1. The regulated current source circuit 104-1 generates a regulatedsource signal 110-1 (e.g., a regulated current signal (I1)) based on theanalog feedback signal 108-1. The regulated current signal (I1) incombination with the impedance (Z) of the electrode creates a voltage(V), where V=I*Z. As the impedance (Z) of electrode changes, theregulated current (I) signal is adjusted to keep the voltage (V)substantially unchanged. For example, if the impedance increases thevoltage on the electrode, the regulated current signal (I1) providesmore current to keep the voltage substantially equal to VREF.

The op-amp 102-2 of the drive-sense circuit 60-2 compares the electrodesignal 76-2 to the VREF′ signal (the 180° phase shifted VREF signal) toproduce an analog comparison signal 106-2. The analog comparison signal106-2 contains a representation of the receive signal (e.g., thereference signal VREF′ and the receive signal). The analog comparisonsignal 106-2 is fed back to the regulated current source circuit 104-2as analog feedback signal 108-2. The regulated current source circuit104-2 generates a regulated source signal 110-2 (e.g., a regulatedcurrent signal (I2)) based on the analog feedback signal 108-2. Theregulated current signal (I2) in combination with the impedance (Z) ofthe electrode creates a voltage (V), where V=I*Z. As the impedance (Z)of the electrode changes, the regulated current (I) signal is adjustedto keep the voltage (V) substantially unchanged. For example, if theimpedance lowers the voltage on the electrode, the regulated currentsignal (I2) is increased to keep the voltage substantially equal toVREF′.

The output op-amp 100 compares the analog comparison signal 106-1 andthe analog comparison signal 106-2 to produce an analog receive (RX)signal 112. Comparing the analog comparison signal 106-1 and the analogcomparison signal 106-2 cancels out the VREF and VREF′ drive componentsdue to the opposite phases and doubles the receive component. As such,the differential drive-sense circuit 96 is more sensitive than thedrive-sense circuit 60 at sensing very small impedance changes becausethe sensed receive signal is doubled in comparison to the drive-sensecircuit 60. Further, with the differential drive-sense circuit 96,because the VREF and VREF′ components are canceled out in the analog RXsignal, common mode noise is eliminated from the analog RX signal.Therefore, the differential drive-sense circuit 96 is more sensitive andhas better signal to noise ratio than the drive-sense circuit 60.Additionally, a lower magnitude VREF in comparison to the DSC embodimentmay be used to reduce overall power.

FIG. 10 is a schematic block diagram of an embodiment of a differentialdrive-sense circuit 96 (DDSC). The DDSC 96 of FIG. 10 operates similarlyto the DDSC 96 of FIG. 9 except that the DDSC 96 of FIG. 10 includes ananalog to digital converter (ADC) 114 coupled to the output op-amp 100operable to convert the analog RX signal 112 to a digital sensed signal116. The analog to digital converter (ADC) 114 may be implemented in avariety of ways. For example, the ADC 114 is one of: a flash ADC, asuccessive approximation ADC, a ramp-compare ADC, a Wilkinson ADC, anintegrating ADC, a delta encoded ADC, and/or a sigma-delta ADC.

FIGS. 11A-11B are schematic block diagrams of examples of mutualcapacitance electric fields of differential electrode pairs. A mutualcapacitance is generated between electrodes due to capacitive coupling.FIG. 11A depicts mutual capacitance electrical fields that exist betweeneach differential electrode pair (e.g., “pair” mutual capacitance). Afirst electrode of a differential electrode pair is provided an analogreference signal (VREF) and a second electrode of the differentialelectrode pair is provided a phase-shifted analog reference signal(VREF′). The differential electrode pairs are positioned such thatelectrodes having in-phase reference signals are next to each other toeliminate cross-coupling between the row and column differentialelectrode pairs. As depicted in FIG. 11A, the pair mutual capacitanceelectrical fields are substantially kept between each differentialelectrode pair.

FIG. 11B depicts mutual capacitance electrical fields that exist betweena column differential electrode pair 54-c and a row differentialelectrode pair 54-r (e.g., “cross” mutual capacitance) as well as thepair mutual capacitance electrical fields of the column differentialelectrode pair 54-c and the row differential electrode pair 54-r.Because electrodes of a differential electrode pairs can be spacedclosely together, the pair mutual capacitance is likely greater than across mutual capacitance.

FIG. 12 is a schematic block diagram of an embodiment of a portion of adifferential touch screen display that includes differential drive-sensecircuits (DDSCs) 96-1 through 96-4, a first column differentialelectrode pair 54-c 1, a second column differential electrode pair 54-c2, a first row differential electrode pair 54-r 1, and a second rowdifferential electrode pair 54-r 2. The DDSCs 96-1 through 96-4 eachoperate similarly to the DDSC of FIG. 10 (e.g., including the ADC at theoutput) to provide differential electrode signals based on referencesignals 1-4 (e.g., VREF) to the differential electrode pairs andgenerate sensed signals 1-4 representative of impedance changes of thedifferential electrode pairs.

As an example, a reference signal 1 (e.g., analog or digital) isprovided to the DDSC 96-1, a reference signal 2 (e.g., analog ordigital) is provided to the DDSC 96-2, a reference signal 3 (e.g.,analog or digital) is provided to the DDSC 96-3, and a reference signal4 (e.g., analog or digital) is provided to the DDSC 96-4. The referencesignal 1 includes a DC component and/or an oscillating at frequency f₁,the reference signal 2 includes a DC component and/or an oscillating atfrequency f₁, the reference signal 3 includes a DC component and/or twooscillating components: the first at frequency f₁ and the second atfrequency f₂, and the reference signal 4 includes a DC component and/ortwo oscillating components: the first at frequency f₁ and a thirdfrequency at frequency f₃.

The DDSC 96-1 generates a differential electrode signal based on thereference signal 1 and provides the differential electrode signal to afirst column differential electrode pair 54-c 1. The DDSC 96-2 generatesa differential electrode signal based on the reference signal 2 andprovides the differential electrode signal to a second columndifferential electrode pair 54-c 2. The DDSC 96-3 generates adifferential electrode signal based on the reference signal 3 andprovides the differential electrode signal to a first row differentialelectrode pair 54-r 1. The DDSC 96-4 generates an electrode signal basedon the reference signal 4 and provides the electrode signal to a secondcolumn differential electrode pair 54-r 2.

In response to the differential electrode signals being applied to thedifferential electrode pairs, the DDSC 96-1 generates a sensed signal 1,which includes a component at frequency f₁, a component a frequency f₂,and a component a frequency f₃. The component at frequency f₁corresponds to the self capacitance of the first column differentialelectrode pair 54-c 1 (e.g., a combination of capacitances C_(p11) andC_(p12)), the component at frequency f₂ corresponds to the mutualcapacitance between the first row differential electrode pair 54-r 1 andfirst column differential electrode pair 54-c 1 (e.g., a parallelcombination of 4 capacitances C_(p1-3)), and the component at frequencyf₃ corresponds to the mutual capacitance between the second rowdifferential electrode pair 54-r 2 and first column differentialelectrode pair 54-c 1 (e.g., a parallel combination of 4 capacitancesC_(p1-4)).

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-2 generates a sensed signal 2, whichincludes a component at frequency f₁, a component a frequency f₂, and acomponent a frequency f₃. The component at frequency f₁ corresponds tothe self capacitance of the second column differential electrode pair54-c 2 (e.g., a combination of capacitances C_(p21) and C_(p22)), thecomponent at frequency f₂ corresponds to the mutual capacitance betweenthe first row differential electrode pair 54-r 1 and second columndifferential electrode pair 54-c 2 (e.g., a parallel combination of 4capacitances C_(p1-3)), and the component at frequency f₃ corresponds tothe mutual capacitance between the second row differential electrodepair 54-r 2 and second column differential electrode pair 54-c 2 (e.g.,a parallel combination of 4 capacitances C_(p1-4)).

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-3 generates the sensed signal 3, whichincludes a component at frequency f₁, a component a frequency f₂, and acomponent a frequency f₃. The component at frequency f₁ corresponds to ashielded self capacitance of the first row differential electrode pair54-r 1 (e.g., a combination of capacitances C_(p31) and C_(p32)), thecomponent at frequency f₂ corresponds to an unshielded self capacitanceof the first row differential electrode pair 54-r 1, and the componentat frequency f₃ corresponds to an unshielded self capacitance of thefirst row differential electrode pair 54-r 1. Because cross mutualcapacitance of the first row differential electrode pair 54-r 1 and thefirst and second column differential electrode pairs is detected insensed signals 1 and 2, only the self capacitance of the first rowdifferential electrode pair 54-r 1 is needed.

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-4 generates the sensed signal 4, whichincludes a component at frequency f₁, a component a frequency f₂, and acomponent a frequency f₃. The component at frequency f₁ corresponds to ashielded self capacitance of the second row differential electrode pair54-r 2 (e.g., a combination of capacitances C_(p41) and C_(p42)), thecomponent at frequency f₂ corresponds to an unshielded self capacitanceof the second row differential electrode pair 54-r 2, and the componentat frequency f₃ corresponds to an unshielded self capacitance of thesecond row differential electrode pair 54-r 2. Because cross mutualcapacitance of the second row differential electrode pair 54-r 1 and thefirst and second column differential electrode pairs is detected insensed signals 1 and 2, only the self capacitance of the second rowdifferential electrode pair 54-r 2 is needed.

With the DDSCs 96-3 and 96-4 transmitting the second and third frequencycomponents, they have a second and third frequency component in theirsensed signals but they are primarily based on the each differential rowelectrode pair's self capacitance with some cross coupling from otherelectrodes carrying signals at different frequencies.

Each active differential drive-sense circuit uses the same frequency forself capacitance (e.g., f₁), such that the differential electrode pairsare at the same potential, which substantially eliminates cross-couplingbetween the differential electrode pairs. Further, the differentialsignaling and the positioning of electrodes having in-phase referencesignals next to each other eliminates cross-coupling between thedifferential electrode pairs. Because self capacitance is greater thanmutual capacitance, cross coupling of mutual capacitance with selfcapacitance is insignificant.

The pair mutual capacitances shown (e.g., C_(m_c1), C_(m_c2), C_(m_r1),and C_(m_r2)) are not detected in this example because self capacitanceof a differential electrode pair is much greater than pair mutualcapacitance. The cross mutual capacitances and self capacitances provideenough data to detect touches and hovers. Detection of pair mutualcapacitances in order to improve and/or enable touch and/or hoverdetection will be discussed with reference to one or more of thefollowing Figures.

FIGS. 13A-13B are schematic block diagrams of embodiments of a pluralityof electrodes creating a plurality of touch sense cells 118 within atouch screen display. In FIG. 13A, a plurality of second electrodes 120are perpendicular and on a different layer of the display than aplurality of first electrodes 122. For each crossing of a firstelectrode and a second electrode, a touch sense cell 118 is created. Ateach touch sense cell 118, a mutual capacitance (C_(m_0)) is createdbetween the crossing electrodes. Each second electrode also includes aself capacitance (C_(p2)) and each first electrode also includes a selfcapacitance (C_(p1)) which are shown as single parasitic capacitances,but, in some instances, are distributed R-C circuits.

A drive-sense circuit (DSC) is coupled to a corresponding one of theelectrodes. The drive-sense circuits (DSC) provides electrode signals tothe electrodes and determines the loading on the electrode signals ofthe electrodes. When no touch is present, each touch cell 138 will havea similar mutual capacitance and each electrode of a similar length willhave a similar self capacitance. When a touch is applied on or near atouch sense cell 118, the mutual capacitance of the cell will decrease(creating an increased impedance) and the self capacitances of theelectrodes creating the touch sense cell will increase (creating adecreased impedance). Between these impedance changes, the processingmodule can detect the location of a touch, or touches.

In FIG. 13B, a plurality of second differential electrode pairs isperpendicular and on a different layer of the display than a pluralityof first differential electrode pairs. For each crossing of a firstdifferential electrode pair and a second differential electrode pair, atouch sense cell 118 is created. At each touch sense cell 118, a mutualcapacitance (C_(m)) is created between the crossing electrodes. Incomparison to FIG. 13A, the mutual capacitance C_(m) is greater than themutual capacitance C_(m_0) due to the additional row and columncrossings. Therefore, in FIG. 13B, mutual capacitance change detectionis more sensitive than in FIG. 13A.

Each second differential electrode pair also includes a self capacitance(C_(p22)) and each first differential electrode pair also includes aself capacitance (C_(p11)) which are shown as single parasiticcapacitances, but, in some instances, are distributed R-C circuits. Incomparison to FIG. 13A, the self capacitance C_(p22) is greater than theself capacitance C_(p1) and the self capacitance C_(p11) is greater thanthe self capacitance C_(p1) due to the additional electrodes. Therefore,in FIG. 13B, self capacitance change detection is more sensitive than inFIG. 13A.

A differential drive-sense circuit (DDSC) is coupled to a correspondingone of the differential electrode pairs. The differential drive-sensecircuit (DDSC) provides electrode signals to the differential electrodepairs and determines the loading on the electrode signals of thedifferential electrode pairs. When no touch is present, each touch cell118 will have a similar mutual capacitance and each differentialelectrode pair of a similar length will have a similar self capacitance.When a touch is applied on or near a touch sense cell 118, the mutualcapacitance of the cell will decrease (creating an increased impedance)and the self capacitances of the differential electrode pairs creatingthe touch sense cell will increase (creating a decreased impedance).Between these impedance changes, the processing module can detect thelocation of a touch, or touches.

FIGS. 14A-14D are schematic block diagrams of embodiments of touchscreen electrode patterns that include row differential electrode pairs54-r and column differential electrode pairs 54-c. Each row differentialelectrode pair 54-r and each column differential electrode pair 54-rincludes a plurality of individual conductive cells (e.g., capacitivesense plates) (e.g., white cells for columns, gray cells for rows) thatare electrically coupled together. The size of a cell depends on thedesired resolution of touch sensing. For example, a cell size may be 1millimeter by 1 millimeter to 5 millimeters by 5 millimeters to provideadequate touch sensing for cell phones and tablets. Making the cellssmaller improves touch resolution and will typically reduce touch sensorerrors (e.g., touching a “w” by an “e” is displayed).

Mutual capacitance is generated between a differential pair ofelectrodes and at a crossing of a row and column differential pair ofelectrodes. Therefore, a differential electrode pair configuration hasincreased mutual capacitance in comparison to a single electrodeconfiguration (e.g., where mutual capacitance is generated between a rowand column electrode). Various cell shapes, patterns, and dielectricmaterials can be used to further increase mutual capacitance ofdifferential electrode pair configurations. Based on the capacitanceequation C=εA/d, where ε is a dielectric constant, A is the area of aplate, and d is the distance between the plates, the cells for adifferential pair of electrodes should be as close as possible (e.g.,decrease d) and have as large of an area as possible and practical(e.g., increase A) to increase mutual capacitance. Further, the crosssections of row differential pairs of electrodes and column differentialpairs of electrodes should be as close as possible (e.g., decrease d)and have as large of an area as possible and practical (e.g., increaseA) to increase mutual capacitance. A dielectric material with a higherdielectric constant could also be used between the differential pairsand the cross sections of rows and columns to increase mutualcapacitance.

The cells for the row and column differential electrode pairs may be onthe same layer or on different layers. In FIG. 14A, the cells for therow and column differential electrode pairs are shown on differentlayers where each row and column differential electrode pair is coupledto a differential drive-sense circuit (DDSC). While the cells are shownto be square, they may be of any polygonal shape, diamond, or circularshape. With the cells for the row and column differential electrodepairs on different layers, a square or rectangular shape allows thedifferential electrode pairs to be close together and have as large ofan area as required for enhanced mutual capacitance. Further, adielectric material could be used between the layers to increase mutualcapacitance between the row and column differential electrode pairs.

In FIGS. 14B-14D, the cells for row and column differential electrodepairs are shown on the same layer. The electric coupling between thecells is done using vias and running traces (e.g., wire traces) onanother layer. Note that the cells may be on one or more ITO layers of atouch screen, which includes a touch screen display. With the cells forthe row and column differential electrode pairs on the same layer, theposition, pattern, size, and shape of differential electrode pairsshould be considered in order to increase mutual capacitance and not tointerfere with the benefits that differential electrode pairs provide(e.g., decreased noise and increased sensing sensitivity). For example,one electrode of a differential electrode pair should not be placed toofar from the other electrode of the differential electrode pair or beseparated by an electrode of a different differential electrode pair.

FIGS. 14B-14D depict various cell shapes and electrode patterns thatcould be used for the row and column differential electrode pairs on asingle layer. For example, in FIG. 14B one electrode of a differentialelectrode pair includes electrically coupled half squares (e.g., righttriangles) and the other electrode of the differential electrode pairincludes electrically coupled half squares such that the two sets ofhalf squares form a separated square. Mutual capacitance is generatedbetween the half squares of a differential electrode pair and wherever arow differential electrode pair and a column differential electrode pairintersect.

FIG. 14C is similar to FIG. 14B except that the half squares haveclipped corners to increase the area at a row and column cross sectionswhich may increase mutual capacitance. In FIG. 14D, the cells have anelongated octagonal shape to increase the area at a row and column crosssection. Other cell shapes and electrode patterns are possible. Further,a dielectric material could be used between the differential electrodepairs to increase mutual capacitance.

FIG. 15 is a schematic block diagram of an example of a firstdifferential drive-sense circuit (DDSC) 96-1 coupled to a columndifferential electrode pair 54-c and a third differential drive-sensecircuit (DDSC) 96-3 coupled to a row differential electrode pair 54-rwithout a touch proximal to the electrodes. Each of the differentialdrive-sense circuits operate similarly to the DDSC of FIGS. 9 and 10 .

As an example, a first reference signal 124-1 (e.g., VREF) is providedto the first differential drive-sense circuit 96-1 and a third referencesignal 124-3 is provided to the third differential drive-sense circuit96-3. The first reference signal includes a DC component and/or anoscillating at frequency f₁. The third reference signal includes a DCcomponent and/or two oscillating components: the first at frequency f₁and the second at frequency f₂.

The first differential drive-sense circuit 96-1 generates a differentialelectrode signal (e.g., first and second electrode signals 76-1 and76-2) based on the reference signal 124-1 and provides the electrodesignal 76-1 to the first column electrode 54-c 1 of the columndifferential electrode pair 54-c and provides the electrode signal 76-2to the second column electrode 54-c 2 of the column differentialelectrode pair 54-c. The third differential drive-sense circuit 96-3generates a differential electrode signal (e.g., first and secondelectrode signals 76-1 and 76-2) based on the reference signal 124-3 andprovides the electrode signal 76-1 to the first row electrode 54-r 1 ofthe row differential electrode pair 54-r and provides the electrodesignal 76-2 to the second row electrode 54-r 2 of the row differentialelectrode pair 54-r.

In response to the differential electrode signals being applied to theelectrodes, the first differential drive-sense circuit 96-1 generates afirst sensed signal 116-1, which includes a component at frequency f₁and a component a frequency f₂. The component at frequency f₁corresponds to the self capacitance of the column differential electrodepair 54-c and the component a frequency f₂ corresponds to the mutualcapacitance between the row and column differential electrode pairs 54-cand 54-r. The self capacitance is expressed as 1/(2πf₁C_(p1)) and themutual capacitance is expressed as 1/(2πf₂C_(m)) where C_(p1) is acombination of C_(p11) and C_(p12) and C_(m) is a combination of fourcross mutual capacitances at C_(m1-3).

Also, in response to the electrode signals being applied to theelectrodes, the third differential drive-sense circuit 96-3 generates athird sensed signal 116-3, which includes a component at frequency f₁and a component at frequency f₂. The component at frequency f₁corresponds to a shielded self capacitance of the row differentialelectrode pair 54-r and the component a frequency f₂ corresponds to anunshielded self capacitance of the row differential electrode pair 54-r.The shielded self capacitance of the row differential electrode pair isexpressed as 1/(2πf₁C_(p2)) and the unshielded self capacitance of therow differential electrode pair is expressed as 1/(2πf₂C_(p2)) whereC_(p1) is a combination of capacitances C_(p21) and C_(p22).

With each active differential drive-sense circuit using the samefrequency for self capacitance (e.g., f₁), the row and columndifferential electrode pairs are at the same potential, whichsubstantially eliminates cross-coupling between the row and columndifferential electrode pairs. This provides a shielded (i.e., low noise)self capacitance measurement for the active differential drive-sensecircuits. In this example, with the third differential drive-sensecircuit transmitting the second frequency component, it has a secondfrequency component in its sensed signal but is primarily based on therow differential electrode pair's self capacitance with some crosscoupling from other electrodes carrying signals at differentfrequencies. The cross coupling of signals at other frequencies injectsunwanted noise into this self capacitance measurement and hence it isreferred to as unshielded.

FIG. 15A is a schematic block diagram of an example of a firstdifferential drive sense circuit 96-1 coupled to a column differentialelectrode pair 54-c and a third differential drive sense circuit 96-3coupled to a row differential electrode pair 54-r with a grounded touchproximal to the electrodes. The example of FIG. 15A is similar to theexample of FIG. 15 with the difference being the grounded touch proximalto the differential electrode pairs (e.g., a touch that shadows theintersection of the differential electrode pairs or is physically closeto the intersection of the differential electrode pairs). With thegrounded touch (e.g., a finger touch, etc.), the self-capacitance andthe mutual capacitance of the electrodes are changed.

In this example, the impedance of the self-capacitance at f₁ of thecolumn differential electrode pair 54-c now includes the effect of thefinger capacitance. As such, the impedance of the self-capacitance ofthe column differential electrode pair 54-c equals1/(2πf₁*(C_(p1)+C_(f1)), which is included the sensed signal 116-1. Thesecond frequency component at f₂ corresponds to the impedance of themutual capacitance at f₂, which includes the effect of the fingercapacitance. As such, the impedance of the mutual capacitance equals1/(2πf₂C_(m_1)), where C_(m_1)=(C_(m)*C_(n))/(C_(m)+C_(n)).

Continuing with this example, the first frequency component at f₁ of thethird sensed signal 116-3 corresponds to the impedance of the shieldedself-capacitance of the row differential electrode pair 54-r at f₁,which is affected by the finger capacitance. As such, the impedance ofthe capacitance of the row differential electrode pair 54-r equals1/(2πf₁*(C_(p2)+C_(f2))). The second frequency component at f₂ of thethird sensed signal 116-3 corresponds to the impedance of the unshieldedself-capacitance at f₂, which includes the effect of the fingercapacitance and is equal to 1/(2πf₂*(C_(p2)+C_(f2)).

FIG. 15B is a schematic block diagram of an example of a firstdifferential drive sense circuit 96-1 coupled to a column differentialelectrode pair 54-c and a third differential drive sense circuit 96-3coupled to a row differential electrode pair 54-r with an ungroundedtouch proximal to the electrodes. The example of FIG. 15B is similar tothe example of FIG. 15 with the difference being the ungrounded touchproximal to the differential electrode pairs (e.g., a touch that shadowsthe intersection of the differential electrode pairs or is physicallyclose to the intersection of the differential electrode pairs). With theungrounded touch (e.g., an ungrounded object), only mutual capacitanceof the electrode pairs is changed. With greater mutual capacitancechange sensitivity, the differential drive-sense circuits are better atdetected ungrounded objects than drive-sense circuits.

In this example, the impedance of the self-capacitance at f₁ of thecolumn differential electrode pair 54-c remains substantially unchangeddue to the ungrounded object. As such, the impedance of theself-capacitance of the column differential electrode pair 54-c equals1/(2πf₁*(C_(p1))), which is included the sensed signal 116-1. The secondfrequency component at f₂ corresponds to the impedance of the mutualcapacitance at f₂, which includes the effect of the ungrounded objectcapacitance. As such, the impedance of the mutual capacitance equals1/(2πf₂C_(m_2)), where C_(m_2)=(C_(m)*C_(O1))/(C_(m)+C_(O1)).

Continuing with this example, the first frequency component at f₁ of thethird sensed signal 116-3 corresponds to the impedance of the shieldedself-capacitance of the row differential electrode pair 54-r at f₁,which remains substantially unchanged by the ungrounded objectcapacitance. As such, the impedance of the capacitance of the rowdifferential electrode pair 54-r equals 1/(2πf₁*C_(p2)). The secondfrequency component at f₂ of the third sensed signal 116-3 correspondsto the impedance of the unshielded self-capacitance at f₂, which remainssubstantially unchanged by the ungrounded object capacitance and isequal to 1/(2πf₂*(C_(p2))). In another embodiment, any small changesdetected in the self capacitance measurements could be attributable topair mutual capacitances when detecting an ungrounded object.

FIG. 16 is a schematic block diagram of a touchless example of a fewdifferential drive-sense circuits 96-1 and 96-3 and a portion of thetouch screen processing module 56 of a differential touch screen display44. The portion of the processing module 56 includes analog to digitalconverters (ADCs) 114-1 and 114-3 (e.g., when the DDSCs do not includeADCs), band pass filters 136, 138, 136-1, & 138-3, and frequencyinterpreters 164 & 164-3, and 166 & 166-3. As previously discussed, afirst differential drive-sense circuit is coupled to a first columndifferential electrode pair 54-c 1 and a third differential drive-sensecircuit is coupled to a first row differential electrode pair electrode54-r 1.

The differential drive-sense circuits 96 provide electrode signals totheir respective differential electrode pairs 54 and produce therefromrespective sensed signals 116. The first sensed signal 116-1 includes afirst frequency component at f₁ that corresponds to the self capacitanceof the first column differential electrode pair 54-c 1 and a secondfrequency component at f₂ that corresponds to the mutual capacitancebetween the first column differential electrode pair 54-c 1 and thefirst row differential electrode pair 54-r 1. The second sensed signal116-3 includes a first frequency component at f₁ that corresponds to theshielded self capacitance of the first row differential electrode pairelectrode 54-r 1 and/or a second frequency component at f₂ thatcorresponds to the unshielded self capacitance of the first rowdifferential electrode pair 54-r 1. In an embodiment, the sensed signals116 are frequency domain digital signals.

The first bandpass filter 136 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₁ and attenuatessignals outside of the bandpass region. As such, the first bandpassfilter 136 passes the portion of the sensed signal 116-1 thatcorresponds to the self capacitance of the first column differentialelectrode pair 54-c 1. In an embodiment, the sensed signal 116 is adigital signal, thus, the first bandpass filter 136 is a digital filtersuch as a cascaded integrated comb (CIC) filter, a finite impulseresponse (FIR) filter, an infinite impulse response (IIR) filter, aButterworth filter, a Chebyshev filter, an elliptic filter, etc.

The frequency interpreter 164 receives the first bandpass filter sensedsignal and interprets it to render a self capacitance (“cap”) 128-1value for the first column differential electrode pair 54-c 1. As anexample, the frequency interpreter 164 is a processing module, orportion thereof, that executes a function to convert the first bandpassfilter sensed signal into the self capacitance 128-1 value, which is anactual capacitance value, a relative capacitance value (e.g., in a rangeof 0-100), or a difference capacitance value (e.g., is the differencebetween a default capacitance value and a sensed capacitance value). Asanother example, the frequency interpreter 164 is a look up table wherethe first bandpass filter sensed signal is an index for the table.

The second bandpass filter 138 passes, substantially unattenuated,signals in a second bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₂ and attenuatessignals outside of the bandpass region. As such, the second bandpassfilter 138 passes the portion of the sensed signal 116-1 thatcorresponds to the mutual capacitance between the first columndifferential electrode pair 54-c 1 and the first row differentialelectrode pair 54-r 1. In an embodiment, the sensed signal 116-1 is adigital signal, thus, the second bandpass filter 138 is a digital filtersuch as a cascaded integrated comb (CIC) filter, a finite impulseresponse (FIR) filter, an infinite impulse response (IIR) filter, aButterworth filter, a Chebyshev filter, an elliptic filter, etc.

The frequency interpreter 166 receives the second bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 130-1value. As an example, the frequency interpreter 166 is a processingmodule, or portion thereof, that executes a function to convert thesecond bandpass filter sensed signal into the mutual capacitance 130-1value, which is an actual capacitance value, a relative capacitancevalue (e.g., in a range of 0-100), and/or a difference capacitance value(e.g., is the difference between a default capacitance value and asensed capacitance value). As another example, the frequency interpreter166 is a look up table where the first bandpass filter sensed signal isan index for the table.

For the first row differential electrode pair 54-r 1, the differentialdrive-sense circuit 96-3 produces a third sensed signal 116-3, whichincludes a shielded self capacitance component and/or an unshielded selfcapacitance component. The third bandpass filter 136-3 is similar to thefirst bandpass filter 136 and, as such passes signals in a bandpassregion centered about frequency f₁ and attenuates signals outside of thebandpass region. In this example, the third bandpass filter 136-3 passesthe portion of the third sensed signal 116-3 that corresponds to theshielded self capacitance of the row differential electrode pair 54-r.

The frequency interpreter 164-3 receives the third bandpass filtersensed signal and interprets it to render a shielded self capacitance(“cap”) 132-3 value for the first row differential electrode pair 54-r1. The frequency interpreter 164-3 may be implemented similarly to thefirst frequency interpreter 164 or an integrated portion thereof. In anembodiment, the shielded self capacitance 132-3 value is an actualcapacitance value, a relative capacitance value (e.g., in a range of0-100), or a difference capacitance value (e.g., is the differencebetween a default capacitance value and a sensed capacitance value).

The fourth bandpass filter 138-3, if included, is similar to the secondbandpass filter 138. As such, it passes, substantially unattenuated,signals in a bandpass region centered about frequency f₂ and attenuatessignals outside of the bandpass region. In this example, the fourthbandpass filter 138-3 passes the portion of the third sensed signal116-3 that corresponds to the unshielded self capacitance of the firstrow differential electrode pair 54-r 1.

The frequency interpreter 166-3, if included, receives the fourthbandpass filter sensed signal and interprets it to render an unshieldedself capacitance (“cap”) 134-3 value. The frequency interpreter 166-3may be implemented similarly to the frequency interpreter 166 or anintegrated portion thereof. In an embodiment, the unshielded selfcapacitance 134-3 value is an actual capacitance value, a relativecapacitance value (e.g., in a range of 0-100), or a differencecapacitance value (e.g., is the difference between a default capacitancevalue and a sensed capacitance value). Note that the unshielded selfcapacitance may be ignored, thus band pass filter 138-3 and frequencyinterpreter 166-3 may be omitted.

FIG. 17 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display 55 that includesdifferential drive-sense circuits (DDSCs) 96-1 through 96-4, a first andsecond column differential electrode pair 54-c 1 and 54-c 2, and a firstand second row differential electrode pair 54-r 1 and 54-r 2. Theno-ground plane differential touch screen display 55 of FIG. 17 operatessimilarly to the touch screen display of FIG. 12 except that there is noground plane. Without a ground connection at each electrode, selfcapacitance cannot be measured. However, due to increased mutualcapacitance generated by the differential electrode pairs as previouslydiscussed, mutual capacitance detection is improved and can be used todetect touches, hovers, and un-grounded objects without the need of selfcapacitance detection.

The DDSCs 96-1 through 96-4 operate similarly to the DDSCs of FIG. 10(e.g., including the ADC at the output) to provide reference signals 1-4(e.g., VREF) to the differential electrode pairs and generate sensedsignals 1-4 representative of impedance changes of the differentialelectrode pairs.

As an example, a reference signal 1 (e.g., analog or digital) isprovided to the DDSC 96-1, a reference signal 2 (e.g., analog ordigital) is provided to the DDSC 96-2, a reference signal 3 (e.g.,analog or digital) is provided to the DDSC 96-3, and a reference signal4 (e.g., analog or digital) is provided to the DDSC 96-4. The referencesignal 1 includes a DC component and/or an oscillating at frequency f₁,the reference signal 2 includes a DC component and/or an oscillating atfrequency f₂, the reference signal 3 includes a DC component and/or anoscillating at frequency f₃, and the reference signal 4 includes a DCcomponent and/or an oscillating at frequency f_(4.)

The DDSC 96-1 generates an electrode signal based on the referencesignal 1 and provides the electrode signal to the first columndifferential electrode pair 54-c 1. The DDSC 96-2 generates an electrodesignal based on the reference signal 2 and provides the electrode signalto the second column differential electrode pair 54-c 2. The DDSC 96-3generates an electrode signal based on the reference signal 3 andprovides the electrode signal to the first row differential electrodepair 54-r 1. The DDSC 96-4 generates an electrode signal based on thereference signal 4 and provides the electrode signal to the secondcolumn differential electrode pair 54-r 2.

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-1 generates a sensed signal 1, whichincludes components at frequencies f₁-f₄. The component at frequency f₁corresponds to the mutual capacitance of first and second electrodes ofthe first column differential electrode pair 54-c 1 or C_(m1).

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-2 generates a sensed signal 2, whichincludes components at frequencies f₁-f₄. The component at frequency f₂corresponds to the mutual capacitance of first and second electrodes ofthe second column differential electrode pair 54-c 2 or C_(m2).

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-3 generates a sensed signal 3, whichincludes components at frequencies f₁-f₄. The component at frequency f₃corresponds to the mutual capacitance of first and second electrodes ofthe first row differential electrode pair 54-r 1 or Cm₃.

In response to the electrode signals being applied to the differentialelectrode pairs, the DDSC 96-4 generates a sensed signal 4, whichincludes components at frequencies f₁-f₄. The component at frequency f₄corresponds to the mutual capacitance of first and second electrodes ofthe second row differential electrode pair 54-r 2 or C_(m4).

With no ground plane, the electrical field (generated by mutualcapacitance) does not radiate outwards but stays between differentialpairs. Each active differential drive-sense circuit uses a differentfrequency for measuring mutual capacitance of a differential electrodepair (e.g., f₁-f₄) to isolate the intended mutual capacitancemeasurement. Unlike self capacitance measurement, cross coupling betweencross mutual capacitance and pair mutual capacitance is possible andthus different frequencies for measuring mutual capacitance arerequired. The differential electrode pairs are positioned such thatelectrodes having in-phase reference signals are next to each other tosubstantially eliminate cross-coupling between the row and columndifferential electrode pairs.

FIG. 18 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display 55 that includesdifferential drive-sense circuits (DDSCs) 96-1 through 96-4, a first andsecond column differential electrode pair 54-c 1 and 54-c 2, and a firstand second row differential electrode pair 54-r 1 and 54-r 2. FIG. 18operates similarly to the no-ground plane differential touch screendisplay 55 of FIG. 17 and shows an example of detecting a touch and/orhover 140 on the no-ground plane differential touch screen display 55.The touch and/or hover 140 shown causes a decrease in the mutualcapacitance between a first column differential electrode pair 54-c(e.g., C_(m1)) and a decrease in the mutual capacitance between a firstrow differential electrode pair 54-r (e.g., C_(m3)).

The DDSCs 1 and 3 produce sensed signals representative of these changesand a processing module is operable to interpret the changes as mutualcapacitance measurements and interpret the mutual capacitancemeasurements as user inputs. For example, a smaller mutual capacitancedecrease may indicate a hover user input and a larger mutual capacitancedecrease may indicate a touch user input. Further, the location andduration of the mutual capacitance changes may indicate particular userinput functions (e.g., a selection, scroll, etc.).

FIG. 19 is a schematic block diagram of an example of columndifferential drive-sense circuits 96-1 and 96-2 (e.g., DDSC 96-1 and 2of FIGS. 17-18 ) and a portion of the touch screen processing module ofa no-ground plane differential touch screen display. The portion of theprocessing module includes analog to digital converters (ADCs) 114-1 and114-2 (e.g., when the DDSCs do not include ADCs), band pass filters 136and 138 and frequency interpreters 164 and 166. A first differentialdrive-sense circuit 96-1 is coupled to a first column differentialelectrode pair 54-c 1 and a second differential drive-sense circuit 96-2is coupled to a second column differential electrode pair electrode 54-c2.

The differential drive-sense circuits 96 provide electrode signals totheir respective differential electrode pairs 54 and produce therefromrespective sensed signals 116. The first sensed signal 116-1 includes afirst frequency component at f₁ that corresponds to the mutualcapacitance of the first and second electrodes of the first columndifferential electrode pair 54-c 1. A second frequency component at f₂is not included in the sensed signal 116-1 since coupling between thecolumn differential pairs does not occur.

The second sensed signal 116-2 includes a second frequency component atf₂ that corresponds to the mutual capacitance of the first and secondelectrodes of the second column differential electrode pair 54-c 2. Afrequency component at f₁ is not included in the sensed signal 116-2because coupling between the column differential pairs does not occur.In an embodiment, the sensed signals 116 are frequency domain digitalsignals.

The first bandpass filter 136 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₁ and attenuatessignals outside of the bandpass region. As such, the first bandpassfilter 136 passes the portion of the sensed signal 116-1 thatcorresponds to the mutual capacitance of the first column differentialelectrode pair 54-c 1. In an embodiment, the sensed signal 116-1 is adigital signal, thus, the first bandpass filter 136 is a digital filtersuch as a cascaded integrated comb (CIC) filter, a finite impulseresponse (FIR) filter, an infinite impulse response (IIR) filter, aButterworth filter, a Chebyshev filter, an elliptic filter, etc.

The frequency interpreter 164 receives the first bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 130value for the first column differential electrode pair 54-c 1. As anexample, the frequency interpreter 164 is a processing module, orportion thereof, that executes a function to convert the first bandpassfilter sensed signal into the mutual capacitance 130 value, which is anactual capacitance value, a relative capacitance value (e.g., in a rangeof 0-100), or a difference capacitance value (e.g., is the differencebetween a default capacitance value and a sensed capacitance value). Asanother example, the frequency interpreter 164 is a look up table wherethe first bandpass filter sensed signal is an index for the table.

For the second column differential electrode pair 54-c 2, thedifferential drive-sense circuit 96-2 produces a second sensed signal116-2. The bandpass filter 138 passes, substantially unattenuated,signals in a bandpass region centered about frequency f₂ and attenuatessignals outside of the bandpass region. In this example, the bandpassfilter 138 passes the portion of the second sensed signal 116-2 thatcorresponds to the mutual capacitance of the second column differentialelectrode pair 54-c 2.

The frequency interpreter 166 receives the second bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 133value for the second column differential electrode pair 54-c 2. Thefrequency interpreter 166 may be implemented similarly to the firstfrequency interpreter 164 or an integrated portion thereof. In anembodiment, the mutual capacitance 133 value is an actual capacitancevalue, a relative capacitance value (e.g., in a range of 0-100), or adifference capacitance value (e.g., is the difference between a defaultcapacitance value and a sensed capacitance value).

FIG. 20 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display 55 that includesdifferential drive-sense circuits (DDSCs) 96-1 through 96-4, a first andsecond column differential electrode pair 54-c 1 and 54-c 2, and a firstand second row differential electrode pair 54-r 1 and 54-r 2. FIG. 20operates similarly to the no-ground plane differential touch screendisplay 55 of FIG. 17 and shows an example of detecting two touchesand/or hovers 140-1 and 140-2 simultaneously on the no-ground planedifferential touch screen display 55. The touch and/or hover 140-1 showncauses a decrease in the mutual capacitance between the first columndifferential electrode pair 54-c 1 (e.g., C_(m1)) and a decrease in themutual capacitance between the first row differential electrode pair54-r 1 (e.g., C_(m3)).

The touch and/or hover 140-2 shown causes a decrease in the mutualcapacitance between the second column differential electrode pair 54-c 2(e.g., C_(m2)) and a decrease in the mutual capacitance between a secondrow differential electrode pair 54-r 2 (e.g., C_(m4)).

Because the simultaneous touches 140-1 and 140-2 cause decreases in themutual capacitances C_(m1), C_(m2), C_(m3), and C_(m4) simultaneously, aghost (i.e., not real) touch/hover 142-1 is sensed at the intersectionof the first column differential electrode pair 54-c 1 and the secondrow differential electrode pair 54-r 2 and a ghost touch/hover 142-2 issensed at the intersection of the second column differential electrodepair 54-c 2 and the first row differential electrode pair 54-r 1. Inthis example, the no-ground plane differential touch screen display isunable to distinguish between the real touches 140-1 and 140-2 and ghosttouches 142-1 and 142-2.

FIGS. 21A-21B are schematic block diagrams of embodiments ofdifferential drive-sense circuits and a portion of the touch screenprocessing module of a no-ground plane differential touch screendisplay. FIG. 21A includes row differential drive-sense circuits 96-3and 96-4 (e.g., DDSC 96-3 and 96-4 of FIG. 20 ) and a portion of thetouch screen processing module of a no-ground plane differential touchscreen display. The portion of the processing module includes analog todigital converters (ADCs) 114-3 and 114-4 (e.g., when the DDSCs do notinclude ADCs), band pass filters 144 and 150 and frequency interpreters146 and 152. A differential drive-sense circuit 96-3 is coupled to afirst row differential electrode pair 54-r 1 and a differentialdrive-sense circuit 96-4 is coupled to a second row differentialelectrode pair electrode 54-r 2.

The DDSC 96-3 generates an electrode signal based on the referencesignal 3 (where reference signal 3 includes the frequency component atf₃) and provides the electrode signal to the first row differentialelectrode pair 54-r 1. The DDSC 96-4 generates an electrode signal basedon the reference signal 4 (where reference signal 4 includes thefrequency component at f₄) and provides the electrode signal to thesecond row differential electrode pair 54-r 2.

FIG. 21B includes column differential drive-sense circuits 96-1 and 96-2(e.g., DDSC 96-1 and 96-2 of FIG. 20 ) and a portion of the touch screenprocessing module of a no-ground plane differential touch screendisplay. The portion of the processing module includes analog to digitalconverters (ADCs) 114-1 and 114-2 (e.g., when the DDSCs do not includeADCs), band pass filters 136, 138, 144-1 & 144-2, and 150-1 & 150-2 andfrequency interpreters 164, 166, 146-1 & 146-2, and 152-1 and 152-2. Adifferential drive-sense circuit 96-1 is coupled to a first columndifferential electrode pair 54-c 1 and a differential drive-sensecircuit 96-2 is coupled to a second column differential electrode pairelectrode 54-c 2.

The DDSC 96-1 generates an electrode signal based on the referencesignal 1 (where reference signal 1 includes the frequency component atf₁) and provides the electrode signal to the first column differentialelectrode pair 54-c 1. The DDSC 96-2 generates an electrode signal basedon the reference signal 2 (where reference signal 2 includes thefrequency component at f2) and provides the electrode signal to thesecond column differential electrode pair 54-c 2.

The differential drive-sense circuits provide electrode signals to theirrespective differential electrode pairs and produce therefrom respectivesensed signals. Referring back to FIG. 21A, the sensed signal 116-3includes frequency components f₁-f₃. The first frequency component at f₁corresponds to a mutual capacitance at a crossing of the first rowdifferential electrode pair 54-r 1 and the first column differentialelectrode pair 54-c 2 of FIG. 21B. The second frequency component at f₂corresponds to a mutual capacitance at a crossing of the first rowdifferential electrode pair 54-r 1 and the second column differentialelectrode pair 54-c 2 of FIG. 21 . The third frequency component at f₃corresponds to the mutual capacitance of the first and second electrodesof the first row differential electrode pair 54-r 1. A fourth frequencycomponent at f₄ is included in the sensed signal since coupling betweenthe row differential pairs does not occur.

The sensed signal 116-4 includes frequency components f₁, f₂, and f₄.The first frequency component at f₁ corresponds to a mutual capacitanceat a crossing of the second row differential electrode pair 54-r 2 andthe first column differential electrode pair 54-c 1 of FIG. 21B. Thesecond frequency component at f₂ corresponds to a mutual capacitance ata crossing of the second row differential electrode pair 54-r 2 and thesecond column differential electrode pair 54-c 2 of FIG. 21B. The fourthfrequency component at f₄ corresponds to the mutual capacitance of thefirst and second electrodes of the second row differential electrodepair 54-r 2. The third frequency component at f₃ is not included in thesensed signal since coupling between the row differential pairs does notoccur. In an embodiment, the sensed signals 116 are frequency domaindigital signals.

The bandpass filter 144 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₃ and attenuatessignals outside of the bandpass region. As such, the bandpass filter 144passes the portion of the sensed signal 116-3 that corresponds to themutual capacitance of the first row differential electrode pair 54-r 1.In an embodiment, the sensed signal 116-3 is a digital signal, thus, thefirst bandpass filter 144 is a digital filter such as a cascadedintegrated comb (CIC) filter, a finite impulse response (FIR) filter, aninfinite impulse response (IIR) filter, a Butterworth filter, aChebyshev filter, an elliptic filter, etc.

The frequency interpreter 146 receives the bandpass filter sensed signaland interprets it to render a mutual capacitance (“cap”) 148 value forthe first row differential electrode pair 54-r 1. As an example, thefrequency interpreter 146 is a processing module, or portion thereof,that executes a function to convert the first bandpass filter sensedsignal into the mutual capacitance value 148, which is an actualcapacitance value, a relative capacitance value (e.g., in a range of0-100), or a difference capacitance value (e.g., is the differencebetween a default capacitance value and a sensed capacitance value). Asanother example, the frequency interpreter 146 is a look up table wherethe first bandpass filter sensed signal is an index for the table.

For the second row differential electrode pair 54-r 2, the differentialdrive-sense circuit 96-4 produces a second sensed signal 116-4. Thebandpass filter 150 passes, substantially unattenuated, signals in abandpass region centered about frequency f₄ and attenuates signalsoutside of the bandpass region. In this example, the bandpass filter 150passes the portion of the second sensed signal 116-4 that corresponds tothe mutual capacitance of the second row differential electrode pair54-r 2.

The frequency interpreter 152 receives the bandpass filter sensed signaland interprets it to render a mutual capacitance (“cap”) 154 value forthe second row differential electrode pair 54-r 2. In an embodiment, themutual capacitance value 154 is an actual capacitance value, a relativecapacitance value (e.g., in a range of 0-100), or a differencecapacitance value (e.g., is the difference between a default capacitancevalue and a sensed capacitance value).

Referring to FIG. 21B, the first sensed signal 116-1 includes a firstfrequency component at f₁ that corresponds to the mutual capacitance ofthe first and second electrodes of the first column differentialelectrode pair 54-c 1. The third frequency component at f₃ correspondsto a mutual capacitance at a crossing of the first column differentialelectrode pair 54-c 1 and the first row differential electrode pair 54-r1. A fourth frequency component at f₄ corresponds to a mutualcapacitance at a crossing of the first column differential electrodepair 54-c 1 and the second row differential electrode pair 54-r 2. Asecond frequency component is not included in the sensed signal becausecoupling between the column differential pairs does not occur. In anembodiment, the sensed signals 116 are frequency domain digital signals.

To eliminate ghost touches as discussed with reference to FIG. 20 , theprocessing module filters the sensed signals to extract datacorresponding to cross sections of columns and row differentialelectrode pairs. The processing module only needs one mutual capacitancemeasurement per differential electrode pairs cross section so in theexamples of FIGS. 21A-21B, only the sensed signals produced by thecolumn differential electrode pairs are filtered for cross sectionmutual capacitance as well as the mutual capacitance between the columndifferential electrode pairs. In another example, only the sensedsignals produced by the row differential electrodes pairs are filteredfor cross section mutual capacitance as well as the mutual capacitancebetween the row differential electrode pairs.

The bandpass filter 136 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₁ and attenuatessignals outside of the bandpass region. As such, the first bandpassfilter 136 passes the portion of the sensed signal 116-1 thatcorresponds to the mutual capacitance of the first column differentialelectrode pair 54-c. In an embodiment, the sensed signal 116-1 is adigital signal, thus, the first bandpass filter 136 is a digital filtersuch as a cascaded integrated comb (CIC) filter, a finite impulseresponse (FIR) filter, an infinite impulse response (IIR) filter, aButterworth filter, a Chebyshev filter, an elliptic filter, etc.

The frequency interpreter 164 receives the first bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 130value for the first column differential electrode pair 54-c 1. As anexample, the frequency interpreter 164 is a processing module, orportion thereof, that executes a function to convert the first bandpassfilter sensed signal into the mutual capacitance 130 value, which is anactual capacitance value, a relative capacitance value (e.g., in a rangeof 0-100), or a difference capacitance value (e.g., is the differencebetween a default capacitance value and a sensed capacitance value). Asanother example, the frequency interpreter 164 is a look up table wherethe first bandpass filter sensed signal is an index for the table.

The bandpass filter 144-1 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₃ and attenuatessignals outside of the bandpass region. As such, the bandpass filter144-1 passes the portion of the sensed signal 116-1 that corresponds tothe mutual capacitance of the cross section of the first columndifferential electrode pair 54-c 1 and the first row differentialelectrode pair 54-r 1 of FIG. 21A.

The frequency interpreter 146-1 receives the bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 156value for the cross section of the first column differential electrodepair 54-c 1 and the first row differential electrode pair 54-r 1.

The bandpass filter 150-1 passes, substantially unattenuated, signals ina bandpass region centered about frequency f₄ and attenuates signalsoutside of the bandpass region. In this example, the bandpass filter150-1 passes the portion of the first sensed signal 116-1 thatcorresponds to the mutual capacitance of the cross section of the firstcolumn differential electrode pair 54-c 1 and the second rowdifferential electrode pair 54-r 2.

The frequency interpreter 152-1 receives the bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 158value for the cross section of the first column differential electrodepair 54-c 1 and the second row differential electrode pair 54-r 2.

For the second column differential electrode pair 54-c 2, thedifferential drive-sense circuit 96-2 produces a second sensed signal116-2. The bandpass filter 138 passes, substantially unattenuated,signals in a bandpass region centered about frequency f₂ and attenuatessignals outside of the bandpass region. In this example, the bandpassfilter 138 passes the portion of the second sensed signal 116-2 thatcorresponds to the mutual capacitance of the second column differentialelectrode pair 54-c 2.

The frequency interpreter 166 receives the second bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 133value for the second column differential electrode pair 54-c 2. In anembodiment, the mutual capacitance 133 value is an actual capacitancevalue, a relative capacitance value (e.g., in a range of 0-100), or adifference capacitance value (e.g., is the difference between a defaultcapacitance value and a sensed capacitance value).

The bandpass filter 144-2 passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₃ and attenuatessignals outside of the bandpass region. As such, the bandpass filter144-2 passes the portion of the sensed signal 116-2 that corresponds tothe mutual capacitance of the cross section of the second columndifferential electrode pair 54-c 2 and the first row differentialelectrode pair 54-r 1 of FIG. 21A.

The frequency interpreter 146-2 receives the bandpass filter sensedsignal and interprets it to render a mutual capacitance value 160 forthe cross section of the second column differential electrode pair 54-c2 and the first row differential electrode pair 54-r 1 of FIG. 21A.

The bandpass filter 150-2 passes, substantially unattenuated, signals ina bandpass region centered about frequency f₄ and attenuates signalsoutside of the bandpass region. In this example, the bandpass filter150-2 passes the portion of the second sensed signal 116-2 thatcorresponds to the mutual capacitance of the cross section of the secondcolumn differential electrode pair 54-c 2 and the second rowdifferential electrode pair 54-r 2 of FIG. 21A.

The frequency interpreter 152-2 receives the bandpass filter sensedsignal and interprets it to render a mutual capacitance (“cap”) 162value for the cross section of the second column differential electrodepair 54-c 2 and the second row differential electrode pair 54-r 2.

FIG. 22 is a schematic block diagram of an embodiment of a portion of ano-ground plane differential touch screen display 55 that includesdifferential drive-sense circuits (DDSCs) 96-1 through 96-4, a first andsecond column differential electrode pair 54-c 1 and 54-c 2, and a firstand second row differential electrode pair 54-r 1 and 54-r 2. FIG. 20operates similarly to the no-ground plane differential touch screendisplay 55 of FIG. 17 and shows an example of detecting two touchesand/or hovers 140-1 and 140-2 simultaneously on the no-ground planedifferential touch screen display 55. The touch and/or hover 140-1 showncauses a decrease in the mutual capacitance between a first and secondelectrode of the first column differential electrode pair 54-c 1 (e.g.,C_(m1)) and a decrease in the mutual capacitance between a first andsecond electrode of the first row differential electrode pair 54-r 1(e.g., C_(m3)).

The touch and/or hover 140-2 shown causes a decrease in the mutualcapacitance between a first and second electrode of the second columndifferential electrode pair 54-c 2 (e.g., C_(m2)) and a decrease in themutual capacitance between a first and second electrode of the secondrow differential electrode pair 54-r 2 (e.g., C_(m4)).

By identifying mutual capacitance changes at cross sections of columndifferential electrode pairs and row differential electrode pairs, theno-ground plane differential touch screen display can distinguishbetween the real touches 140-1 and 140-2 and ghost touches as discussedwith reference to FIG. 20 .

For example, the real touch 140-1 causes a decrease in the mutualcapacitance at the cross section of the first column differentialelectrode pair 54-c 1 and the first row differential electrode pair 54-r1 (e.g., C_(m1-3) goes down). The real touch 140-2 causes a decrease inthe mutual capacitance at the cross section of the second columndifferential electrode pair 54-c 2 and the second row differentialelectrode pair 54-r 2 (e.g., Cm₂₋₄ goes down). Because the mutualcapacitance at the cross section of the first column differentialelectrode pair 54-c 1 and the second row differential electrode pair54-r 2 and the mutual capacitance at the cross section of the secondcolumn differential electrode pair 54-c 2 and the first row differentialelectrode pair 54-r 1 remain unchanged, the no-ground plane differentialtouch screen display can identify the location of real touches ascompared to ghost touches.

FIG. 23 is a schematic block diagram of an embodiment of a differentialdrive-sense circuit (DDSC) 96 implementing a passive listening function.The differential drive-sense circuit (DDSC) 96 includes drive-sensecircuits 60-1 and 60-2, a 180° phase shifter 98, and an outputoperational amplifier (op-amp) 100. The DDSC 96 of FIG. 23 operatessimilarly to the DDSC of FIG. 9 except the DDSC 96 of FIG. 23 is fed adirect current (DC) voltage reference signal input (e.g., VREF DC)instead of an analog voltage reference signal.

The drive-sense circuits 60-1 and 60-2 each include an op-amp 102-1 and102-2, and a regulated current source circuit 104-1 and 104-2. Withinthe drive-sense circuit 60-1, the positive input terminal of the op-amp102-1 is coupled to a first electrode 54-1 of a differential electrodepair and the negative input terminal of the op-amp 102-1 is coupled to avoltage reference source (e.g., via a signal generator, via theprocessing module that generates and provides the voltage referencesignal, etc.) that provides the DC voltage reference signal VREF DC.Within the drive-sense circuit 60-2, the positive input terminal of theop-amp 102-2 is coupled to the 180° phase shifter 98. Because VREF DC isa DC signal with no phase, the 180° phase shifter 98 provides the DCvoltage reference signal VREF DC to the positive input terminal of theop-amp 102-2. The negative input terminal of the op-amp 56-2 is coupledto a second electrode 54-2 of the differential electrode pair.

The drive-sense circuits 60-1 and 60-2 operate similarly to thedrive-sense circuit 60 of FIG. 3 where the feedback loops function tokeep the electrode signals 76-1 and 76-2 substantially matching the DCreference signal (VREF DC). As such, the electrode signals 76-1 and 76-2will have a similar signal format to that of the VREF DC.

In the passive listening mode, the DDSC 96 can detect AC signals inproximity to the differential touch screen display. For example, adevice 174 (e.g., an active touch screen pen, an active gaming piece,any active electronic device capable of transmitting an AC signal, etc.)transmits an AC signal at a frequency fx in proximity to thedifferential electrode pair 54. The electrode signals 76-1 and 76-2include a drive signal component and a receive signal component thatincludes the AC signal at a frequency fx. The op-amp 102-1 of thedrive-sense circuit 60-1 compares the electrode signal 76-1 to the VREFDC signal to produce an analog comparison signal 106-1 which includes arepresentation of the AC device signal.

The analog comparison signal 106-1 is fed back to the regulated currentsource circuit 104-1 as analog feedback signal 108-1. The regulatedcurrent source circuit 104-1 generates a regulated source signal 110-1(e.g., a regulated current signal (I1)) based on the analog feedbacksignal 108-1. The regulated current signal (I1) in combination with theimpedance (Z) of the electrode creates a voltage (V), where V=I*Z. Asthe impedance (Z) of electrode changes, the regulated current (I) signalis adjusted to keep the voltage (V) substantially unchanged.

The op-amp 102-2 of the drive-sense circuit 60-2 compares the electrodesignal 76-2 to the VREF DC signal to produce an analog comparison signal106-2 which includes a representation of the AC device signal. Theanalog comparison signal 106-2 is fed back to the regulated currentsource circuit 104-2 as analog feedback signal 108-2. The regulatedcurrent source circuit 104-2 generates a regulated source signal 110-2(e.g., a regulated current signal (I2)) based on the analog feedbacksignal 108-2. The regulated current signal (I2) in combination with theimpedance (Z) of the electrode creates a voltage (V), where V=I*Z. Asthe impedance (Z) of the electrode changes, the regulated current (I)signal is adjusted to keep the voltage (V) substantially unchanged.

The output op-amp 100 compares the analog comparison signal 106-1 andthe analog comparison signal 106-2 to produce an analog receive (RX)signal 112. Comparing the analog comparison signal 106-1 and the analogcomparison signal 106-2 doubles the AC receive components representativeof the device 174 signal.

FIG. 24 is a schematic block diagram of an embodiment of a portion of adifferential touch screen display 44 that includes a differentialdrive-sense circuits (DDSCs) 96-1 through 96-4, a first and secondcolumn differential electrode pair 54-c 1 and 54-c 2, and a first andsecond row differential electrode pair 54-r 1 and 54-r 2. The DDSCs 96-1through 96-4 operate similarly to the DDSC of FIG. 23 to provide DCreference signals 1-4 (e.g., VREF DC) to the differential electrodepairs and generate sensed signals 1-4 representative of AC signalsproduced by devices proximal to the differential touch screen display44. To produce the sensed signals 1-4, the DDSCs 96-1 through 96-4 inthis example include an ADC at the output to convert the analogreference signals to a digital sensed signal.

In response to a device 174 transmitting a signal at frequency fxproximal to the first column differential electrode pair 54-c 1 and thefirst row differential electrode pair 54-r 1, the DDSC 96-1 generates asensed signal 1 including a component at frequency f_(x) and the DDSC96-3 generates a sensed signal 3 including a component at frequencyf_(x). Based on the frequency detection and analysis, the differentialtouch screen display can identify the location of the device, identityof a device, and/or an input function associated with the device. Asshown, because the differential touch screen display is in a passivelistening mode, touches and hovers that do not produce an AC signal areignored. Therefore, a user can rest a hand or elbow on the displaywithout the touch interfering with intended user inputs produced by thedevice 174.

FIG. 25 is a schematic block diagram of an embodiment of a portion of adifferential touch screen display 44 that includes a differentialdrive-sense circuits (DDSCs) 96-1 through 96-4, a first and secondcolumn differential electrode pair 54-c 1 and 54-c 2, and a first andsecond row differential electrode pair 54-r 1 and 54-r 2. FIG. 25operates similarly to FIG. 24 except a plurality of devices 1-3 are inproximity to the differential touch screen display. For example, thedevices 1-3 may be game pieces associated with one or more users.

In the example shown, the device 1 is proximal to the first columndifferential electrode pair 54-c 1 and the first row differentialelectrode pair 54-r 1, the device 2 is proximal to the second columndifferential electrode pair 54-c 2 and the second row differentialelectrode pair 54-r 2, and the device 3 is proximal to the first columndifferential electrode pair 54-c 1 and the second row differentialelectrode pair 54-r 2. Device 1 transmits an AC signal at a frequencyf₁, device 2 transmits an AC signal at a frequency f₂, and device 3transmits an AC signal at a frequency f₃.

As such, the DDSC 96-1 generates a sensed signal 1 including frequencycomponents at frequency f₁ and f₃, the DDSC 96-2 generates a sensedsignal 2 including a frequency component at frequency f₂, the DDSC 96-3generates a sensed signal 3 including a frequency component at frequencyf₁, and the DDSC 96-4 generates a sensed signal 4 including frequencycomponents at frequency f₂ and f₃. Based on the frequency detection andanalysis, the differential touch screen display can identify thelocation of the devices, identity of the devices, and/or one or moreinput functions associated with the devices.

FIG. 26 is a schematic block diagram of an embodiment of differentialdrive-sense circuits 96-1 and 96-2 and a portion of the touch screenprocessing module of a differential touch screen display. FIG. 26includes two column differential drive-sense circuits 96-1 and 96-2(e.g., DDSC 96-1 and 96-2 of FIG. 25 ) and the portion of the processingmodule includes analog to digital converters (ADCs) 114-1 and 114-2(e.g., when the DDSCs do not include ADCs), bandpass filters atfrequencies f1-f3 and frequency interpreters 176-1 & 176-2, 178-1 &178-2, and 180-1 & 180-2. The differential drive-sense circuit 96-1 iscoupled to a first column differential electrode pair 54-c 1 and thedifferential drive-sense circuit 96-2 is coupled to a second columndifferential electrode pair electrode 54-c 2.

The differential drive-sense circuits provide electrode signals to theirrespective differential electrode pairs and produce therefrom respectivesensed signals. Continuing the example of FIG. 25 , the sensed signal116-1 includes frequency components f₁ and f₃. The first frequencycomponent at f₁ corresponds to detection of the device 1's transmitsignal. The third frequency component at f₃ corresponds to detection ofthe device 3's transmit signal. The sensed signal 116-2 includes afrequency component at f₂ corresponding to detection of the device 2'stransmit signal.

The bandpass filter at f₁ passes (i.e., substantially unattenuated)signals in a bandpass region (e.g., tens of Hertz to hundreds ofthousands of Hertz, or more) centered about frequency f₁ and attenuatessignals outside of the bandpass region. The bandpass filter at f₂ passes(i.e., substantially unattenuated) signals in a bandpass region (e.g.,tens of Hertz to hundreds of thousands of Hertz, or more) centered aboutfrequency f₂ and attenuates signals outside of the bandpass region. Thebandpass filter at f₃ passes (i.e., substantially unattenuated) signalsin a bandpass region (e.g., tens of Hertz to hundreds of thousands ofHertz, or more) centered about frequency f₃ and attenuates signalsoutside of the bandpass region. More or less bandpass filters may beused depending on how many signals/devices need to be detected at anyone time. Further, when the frequency of a device is unknown, theprocessing module may include one or more wideband filters for filteringa range of frequencies in an area of interest. As another example, theprocessing module may include a plurality of narrow band pass filtersfor filtering a range of frequencies in an area of interest.

As such, the bandpass filter at f₁ passes the portion of the sensedsignal 116-1 that corresponds to device 1 detection. The bandpass filterat f₂ passes the portion of the sensed signal 116-2 that corresponds todevice 2 detection. The bandpass filter at f₃ passes the portion of thesensed signal 116-1 that corresponds to device 3 detection. In anembodiment, the sensed signal 116-1 is a digital signal, thus, thebandpass filters are digital filters such as cascaded integrated comb(CIC) filters, finite impulse response (FIR) filters, infinite impulseresponse (IIR) filters, Butterworth filters, Chebyshev filters, ellipticfilters, etc.

The frequency interpreters 176-180 receive the bandpass filtered sensedsignals and interpret them to render device capacitance values 182-184for the column differential electrode pairs 54-c. As an example, thefrequency interpreter 176-1 is a processing module, or portion thereof,that executes a function to convert the first bandpass filter sensedsignal of the DDSC 96-1 into the device capacitance (“cap”) 182-1 valuepertaining to the device 1, which is an actual capacitance value, arelative capacitance value (e.g., in a range of 0-100), or a differencecapacitance value (e.g., is the difference between a default capacitancevalue and a sensed capacitance value). As another example, the frequencyinterpreter 176-1 is a look up table where the first bandpass filtersensed signal is an index for the table.

The frequency interpreter 180-1 is a processing module, or portionthereof, that executes a function to convert the third bandpass filtersensed signal of the DDSC 96-1 into the device capacitance (“cap”) 186-3value pertaining to the device 3, which is an actual capacitance value,a relative capacitance value (e.g., in a range of 0-100), or adifference capacitance value (e.g., is the difference between a defaultcapacitance value and a sensed capacitance value). As another example,the frequency interpreter 180-1 is a look up table where the thirdbandpass filter sensed signal is an index for the table.

The frequency interpreter 178-2 is a processing module, or portionthereof, that executes a function to convert a second bandpass filtersensed signal of the DDSC 96-2 into the device capacitance (“cap”) 184-2value pertaining to the device 2, which is an actual capacitance value,a relative capacitance value (e.g., in a range of 0-100), or adifference capacitance value (e.g., is the difference between a defaultcapacitance value and a sensed capacitance value). As another example,the frequency interpreter 178-2 is a look up table where the secondbandpass filter sensed signal is an index for the table.

It is noted that terminologies as may be used herein such as bit stream,stream, signal sequence, etc. (or their equivalents) have been usedinterchangeably to describe digital information whose contentcorresponds to any of a number of desired types (e.g., data, video,speech, text, graphics, audio, etc. any of which may generally bereferred to as ‘data’).

As may be used herein, the terms “substantially” and “approximately”provides an industry-accepted tolerance for its corresponding termand/or relativity between items. For some industries, anindustry-accepted tolerance is less than one percent and, for otherindustries, the industry-accepted tolerance is 10 percent or more. Otherexamples of industry-accepted tolerance range from less than one percentto fifty percent. Industry-accepted tolerances correspond to, but arenot limited to, component values, integrated circuit process variations,temperature variations, rise and fall times, thermal noise, dimensions,signaling errors, dropped packets, temperatures, pressures, materialcompositions, and/or performance metrics. Within an industry, tolerancevariances of accepted tolerances may be more or less than a percentagelevel (e.g., dimension tolerance of less than +/−1%). Some relativitybetween items may range from a difference of less than a percentagelevel to a few percent. Other relativity between items may range from adifference of a few percent to magnitude of differences.

As may also be used herein, the term(s) “configured to”, “operablycoupled to”, “coupled to”, and/or “coupling” includes direct couplingbetween items and/or indirect coupling between items via an interveningitem (e.g., an item includes, but is not limited to, a component, anelement, a circuit, and/or a module) where, for an example of indirectcoupling, the intervening item does not modify the information of asignal but may adjust its current level, voltage level, and/or powerlevel. As may further be used herein, inferred coupling (i.e., where oneelement is coupled to another element by inference) includes direct andindirect coupling between two items in the same manner as “coupled to”.

As may even further be used herein, the term “configured to”, “operableto”, “coupled to”, or “operably coupled to” indicates that an itemincludes one or more of power connections, input(s), output(s), etc., toperform, when activated, one or more its corresponding functions and mayfurther include inferred coupling to one or more other items. As maystill further be used herein, the term “associated with”, includesdirect and/or indirect coupling of separate items and/or one item beingembedded within another item.

As may be used herein, the term “compares favorably”, indicates that acomparison between two or more items, signals, etc., provides a desiredrelationship. For example, when the desired relationship is that signal1 has a greater magnitude than signal 2, a favorable comparison may beachieved when the magnitude of signal 1 is greater than that of signal 2or when the magnitude of signal 2 is less than that of signal 1. As maybe used herein, the term “compares unfavorably”, indicates that acomparison between two or more items, signals, etc., fails to providethe desired relationship.

As may be used herein, one or more claims may include, in a specificform of this generic form, the phrase “at least one of a, b, and c” orof this generic form “at least one of a, b, or c”, with more or lesselements than “a”, “b”, and “c”. In either phrasing, the phrases are tobe interpreted identically. In particular, “at least one of a, b, and c”is equivalent to “at least one of a, b, or c” and shall mean a, b,and/or c. As an example, it means: “a” only, “b” only, “c” only, “a” and“b”, “a” and “c”, “b” and “c”, and/or “a”, “b”, and “c”.

As may also be used herein, the terms “processing module”, “processingcircuit”, “processor”, “processing circuitry”, and/or “processing unit”may be a single processing device or a plurality of processing devices.Such a processing device may be a microprocessor, micro-controller,digital signal processor, microcomputer, central processing unit, fieldprogrammable gate array, programmable logic device, state machine, logiccircuitry, analog circuitry, digital circuitry, and/or any device thatmanipulates signals (analog and/or digital) based on hard coding of thecircuitry and/or operational instructions. The processing module,module, processing circuit, processing circuitry, and/or processing unitmay be, or further include, memory and/or an integrated memory element,which may be a single memory device, a plurality of memory devices,and/or embedded circuitry of another processing module, module,processing circuit, processing circuitry, and/or processing unit. Such amemory device may be a read-only memory, random access memory, volatilememory, non-volatile memory, static memory, dynamic memory, flashmemory, cache memory, and/or any device that stores digital information.Note that if the processing module, module, processing circuit,processing circuitry, and/or processing unit includes more than oneprocessing device, the processing devices may be centrally located(e.g., directly coupled together via a wired and/or wireless busstructure) or may be distributedly located (e.g., cloud computing viaindirect coupling via a local area network and/or a wide area network).Further note that if the processing module, module, processing circuit,processing circuitry and/or processing unit implements one or more ofits functions via a state machine, analog circuitry, digital circuitry,and/or logic circuitry, the memory and/or memory element storing thecorresponding operational instructions may be embedded within, orexternal to, the circuitry comprising the state machine, analogcircuitry, digital circuitry, and/or logic circuitry. Still further notethat, the memory element may store, and the processing module, module,processing circuit, processing circuitry and/or processing unitexecutes, hard coded and/or operational instructions corresponding to atleast some of the steps and/or functions illustrated in one or more ofthe Figures. Such a memory device or memory element can be included inan article of manufacture.

One or more embodiments have been described above with the aid of methodsteps illustrating the performance of specified functions andrelationships thereof. The boundaries and sequence of these functionalbuilding blocks and method steps have been arbitrarily defined hereinfor convenience of description. Alternate boundaries and sequences canbe defined so long as the specified functions and relationships areappropriately performed. Any such alternate boundaries or sequences arethus within the scope and spirit of the claims. Further, the boundariesof these functional building blocks have been arbitrarily defined forconvenience of description. Alternate boundaries could be defined aslong as the certain significant functions are appropriately performed.Similarly, flow diagram blocks may also have been arbitrarily definedherein to illustrate certain significant functionality.

To the extent used, the flow diagram block boundaries and sequence couldhave been defined otherwise and still perform the certain significantfunctionality. Such alternate definitions of both functional buildingblocks and flow diagram blocks and sequences are thus within the scopeand spirit of the claims. One of average skill in the art will alsorecognize that the functional building blocks, and other illustrativeblocks, modules and components herein, can be implemented as illustratedor by discrete components, application specific integrated circuits,processors executing appropriate software and the like or anycombination thereof.

In addition, a flow diagram may include a “start” and/or “continue”indication. The “start” and “continue” indications reflect that thesteps presented can optionally be incorporated in or otherwise used inconjunction with one or more other routines. In addition, a flow diagrammay include an “end” and/or “continue” indication. The “end” and/or“continue” indications reflect that the steps presented can end asdescribed and shown or optionally be incorporated in or otherwise usedin conjunction with one or more other routines. In this context, “start”indicates the beginning of the first step presented and may be precededby other activities not specifically shown. Further, the “continue”indication reflects that the steps presented may be performed multipletimes and/or may be succeeded by other activities not specificallyshown. Further, while a flow diagram indicates a particular ordering ofsteps, other orderings are likewise possible provided that theprinciples of causality are maintained.

The one or more embodiments are used herein to illustrate one or moreaspects, one or more features, one or more concepts, and/or one or moreexamples. A physical embodiment of an apparatus, an article ofmanufacture, a machine, and/or of a process may include one or more ofthe aspects, features, concepts, examples, etc. described with referenceto one or more of the embodiments discussed herein. Further, from figureto figure, the embodiments may incorporate the same or similarly namedfunctions, steps, modules, etc. that may use the same or differentreference numbers and, as such, the functions, steps, modules, etc. maybe the same or similar functions, steps, modules, etc. or differentones.

Unless specifically stated to the contra, signals to, from, and/orbetween elements in a figure of any of the figures presented herein maybe analog or digital, continuous time or discrete time, and single-endedor differential. For instance, if a signal path is shown as asingle-ended path, it also represents a differential signal path.Similarly, if a signal path is shown as a differential path, it alsorepresents a single-ended signal path. While one or more particulararchitectures are described herein, other architectures can likewise beimplemented that use one or more data buses not expressly shown, directconnectivity between elements, and/or indirect coupling between otherelements as recognized by one of average skill in the art.

The term “module” is used in the description of one or more of theembodiments. A module implements one or more functions via a device suchas a processor or other processing device or other hardware that mayinclude or operate in association with a memory that stores operationalinstructions. A module may operate independently and/or in conjunctionwith software and/or firmware. As also used herein, a module may containone or more sub-modules, each of which may be one or more modules.

As may further be used herein, a computer readable memory includes oneor more memory elements. A memory element may be a separate memorydevice, multiple memory devices, or a set of memory locations within amemory device. Such a memory device may be a read-only memory, randomaccess memory, volatile memory, non-volatile memory, static memory,dynamic memory, flash memory, cache memory, a quantum register or otherquantum memory and/or any other device that stores data in anon-transitory manner. Furthermore, the memory device may be in a formof a solid-state memory, a hard drive memory or other disk storage,cloud memory, thumb drive, server memory, computing device memory,and/or other non-transitory medium for storing data. The storage of dataincludes temporary storage (i.e., data is lost when power is removedfrom the memory element) and/or persistent storage (i.e., data isretained when power is removed from the memory element). As used herein,a transitory medium shall mean one or more of: (a) a wired or wirelessmedium for the transportation of data as a signal from one computingdevice to another computing device for temporary storage or persistentstorage; (b) a wired or wireless medium for the transportation of dataas a signal within a computing device from one element of the computingdevice to another element of the computing device for temporary storageor persistent storage; (c) a wired or wireless medium for thetransportation of data as a signal from one computing device to anothercomputing device for processing the data by the other computing device;and (d) a wired or wireless medium for the transportation of data as asignal within a computing device from one element of the computingdevice to another element of the computing device for processing thedata by the other element of the computing device. As may be usedherein, a non-transitory computer readable memory is substantiallyequivalent to a computer readable memory. A non-transitory computerreadable memory can also be referred to as a non-transitory computerreadable storage medium.

While particular combinations of various functions and features of theone or more embodiments have been expressly described herein, othercombinations of these features and functions are likewise possible. Thepresent disclosure is not limited by the particular examples disclosedherein and expressly incorporates these other combinations.

What is claimed is:
 1. A method comprises: providing, by a processingmodule of a differential touch screen display, a plurality of row andcolumn analog reference signals to a plurality of column and rowdifferential drive-sense circuits of the differential touch screendisplay, wherein the plurality of column differential drive-sensecircuits is coupled to a plurality of column differential electrodepairs of the differential touch screen display, wherein the plurality ofrow differential drive-sense circuits is coupled to a plurality of rowdifferential electrode pairs of the differential touch screen display,wherein the plurality of column analog reference signals includes afirst oscillating component at a first frequency, and wherein theplurality of row analog reference signals includes the first oscillatingcomponent and a second oscillating component at a second frequency;obtaining, by the processing module, a set of column and row sensedsignals from a set of column and row differential drive-sense circuitsof the plurality of column and row differential drive-sense circuits;and interpreting, by the processing module, the set of column and rowsensed signals as one or more of: a self-capacitance of one or more of:one or more row differential electrode pairs of the set of column androw differential electrode pairs and one or more column differentialelectrode pairs of the set of column and row differential electrodepairs, wherein the first frequency is used for detecting theself-capacitance; and a cross mutual capacitance between one or more of:the one or more row differential electrode pairs and the one or morecolumn differential electrode pairs, wherein the second frequency isused for measuring the cross mutual capacitance on the one or morecolumn differential electrode pairs.
 2. The method of claim 1, whereinthe cross mutual capacitance comprises: a first mutual capacitancebetween a first row electrode of a first row differential electrode pairof the one or more row differential electrode pairs and a first columnelectrode of a first column differential electrode pair of the one ormore column differential electrode pairs; a second mutual capacitancebetween the first row electrode and a second column electrode of thefirst column differential electrode pair; a third mutual capacitancebetween a second row electrode of the first row differential electrodepair and the first column electrode; and a fourth mutual capacitancebetween the second row electrode and the first column electrode.
 3. Themethod of claim 1, wherein the interpreting the set of column and rowsensed signals comprises: filtering, by the processing module, the setof column and row sensed signals to produce a set of filtered column androw sensed signals, wherein the processing module includes a firstbandpass filter centered at the first frequency and a second bandpassfilter centered at the second frequency; and interpreting, by theprocessing module, the set of filtered column and row sensed signals asthe one or more of the self capacitance and the cross mutualcapacitance.
 4. The method of claim 3 further comprises: converting, bythe processing module, the set of filtered column and row sensed signalsto a set of digital filtered column and row sensed signals.
 5. Themethod of claim 1 further comprises: interpreting, by the processingmodule, the one or more of the self capacitance and the cross mutualcapacitance to determine a change in the one or more of the selfcapacitance and the cross mutual capacitance; and interpreting, by theprocessing module, the change in the one or more of the self capacitanceand the cross mutual capacitance as one or more inputs proximal to thedifferential touch screen display.
 6. The method of claim 5, wherein theone or more inputs include one or more of: a grounded touch; anungrounded touch; and a hover.
 7. The method of claim 5 furthercomprises: interpreting, by the processing module, the one or moreinputs as a user function.
 8. The method of claim 6 further comprises:interpreting, by the processing module, the ungrounded touch as anobject proximal to the differential touch screen display.
 9. The methodof claim 6 further comprises: interpreting, by the processing module,the one or more of the self capacitance and the cross mutual capacitanceto determine a change in the cross mutual capacitance, wherein the selfcapacitance remains unchanged; and interpreting, by the processingmodule, the change in the cross mutual capacitance as the ungroundedtouch.
 10. A differential touch screen display comprises: a display; aplurality of row differential electrode pairs; a plurality of columndifferential electrode pairs; a plurality of row differentialdrive-sense circuits coupled to the plurality of row differentialelectrode pairs; a plurality of column differential drive-sense circuitscoupled to the plurality of column differential electrode pairs; and aprocessing module coupled to the plurality of column and rowdifferential drive-sense circuits, wherein the processing module isoperable to: provide a plurality of row and column analog referencesignals to the plurality of column and row differential drive-sensecircuits, wherein the plurality of column analog reference signalsincludes a first oscillating component at a first frequency, and whereinthe plurality of row analog reference signals includes the firstoscillating component and a second oscillating component at a secondfrequency; obtain a set of column and row sensed signals from a set ofcolumn and row differential drive-sense circuits of the plurality ofcolumn and row differential drive-sense circuits; and interpret the setof column and row sensed signals as one or more of: a self-capacitanceof one or more of: one or more row differential electrode pairs of theset of column and row differential electrode pairs and one or morecolumn differential electrode pairs of the set of column and rowdifferential electrode pairs, wherein the first frequency is used fordetecting the self-capacitance; and a cross mutual capacitance betweenone or more of: the one or more row differential electrode pairs and theone or more column differential electrode pairs, wherein the secondfrequency is used for measuring the cross mutual capacitance on the oneor more column differential electrode pairs.
 11. The differential touchscreen display of claim 10, wherein the cross mutual capacitancecomprises: a first mutual capacitance between a first row electrode of afirst row differential electrode pair of the one or more rowdifferential electrode pairs and a first column electrode of a firstcolumn differential electrode pair of the one or more columndifferential electrode pairs; a second mutual capacitance between thefirst row electrode and a second column electrode of the first columndifferential electrode pair; a third mutual capacitance between a secondrow electrode of the first row differential electrode pair and the firstcolumn electrode; and a fourth mutual capacitance between the second rowelectrode and the first column electrode.
 12. The differential touchscreen display of claim 10, wherein the processing module comprises: aset of bandpass filters operable to filter the set of column and rowsensed signals to produce a set of filtered column and row sensedsignals, wherein a first bandpass filter of the set of bandpass filtersis centered at the first frequency and a second bandpass filter of theset of bandpass filters is centered at the second frequency; and whereinthe processing module is operable to interpret the set of column and rowsensed signals by interpreting the set of filtered column and row sensedsignals as the one or more of the self capacitance and the cross mutualcapacitance.
 13. The differential touch screen display of claim 12,wherein the processing module comprises: one or more an analog todigital converters operable to convert the set of filtered column androw sensed signals to a set of digital filtered column and row sensedsignals.
 14. The differential touch screen display of claim 10, whereinthe processing module is further operable to: interpret the one or moreof the self capacitance and the cross mutual capacitance to determine achange in the one or more of the self capacitance and the cross mutualcapacitance; and interpret the change in the one or more of the selfcapacitance and the cross mutual capacitance as one or more inputsproximal to the differential touch screen display.
 15. The differentialtouch screen display of claim 14, wherein the one or more inputs includeone or more of: a grounded touch; an ungrounded touch; and a hover. 16.The differential touch screen display of claim 14, wherein theprocessing module is further operable to interpret the one or moreinputs as a user function.
 17. The differential touch screen display ofclaim 15, wherein the processing module is further operable to interpretthe ungrounded touch as an object proximal to the differential touchscreen display.
 18. The differential touch screen display of claim 15,wherein the processing module is further operable to: interpret the oneor more of the self capacitance and the cross mutual capacitance todetermine a change in the cross mutual capacitance, wherein the selfcapacitance remains unchanged; and interpret the change in the crossmutual capacitance as the ungrounded touch.